宽禁带半导体ZnGa_(2)O_(4)研究进展  

Research Progress of Wide Bandgap Semiconductor ZnGa_(2)O_(4)

作　　者：雷莎莎 龚巧瑞 赵呈春[2,3] 孙晓慧 杭寅 LEI Shasha;GONG Qiaorui;ZHAO Chengchun;SUN Xiaohui;HANG Yin(College of Mathematics,Physics and Statistics,Shanghai University of Engineering Science,Shanghai 201600,China;Advanced Laser and Optoelectronic Functional Materials Department,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]上海工程技术大学数理与统计学院,上海201600 [2]中国科学院上海光学精密机械研究所先进激光与光电功能材料部,上海201800 [3]中国科学院大学材料与光电研究中心,北京100049

出　　处：《人工晶体学报》2024年第8期1289-1301,共13页Journal of Synthetic Crystals

摘　　要：宽禁带半导体材料因独特的物理和化学特性,在光电器件等领域展现出巨大的潜力,受到了越来越多的研究和关注。镓酸锌(ZnGa_(2)O_(4))作为一种宽禁带半导体材料,具有禁带宽度大、结构独特、热稳定性良好等优点,在日盲紫外光电探测、X射线探测等领域具有广阔的应用前景。本文从ZnGa_(2)O_(4)的基本结构特性出发,详细介绍了ZnGa_(2)O_(4)的禁带宽度、光电性能以及ZnGa_(2)O_(4)体块单晶和薄膜的制备方法。结合国内外学者近期的一些研究成果,概述了ZnGa_(2)O_(4)在多个领域的应用前景,特别是日盲紫外光电探测、忆阻器、X射线探测和功率器件等方面的研究进展。最后对ZnGa_(2)O_(4)材料的未来发展方向提出了展望,指出可进一步提升ZnGa_(2)O_(4)材料的质量和性能,以提升器件性能,满足更高级别的应用需求。Due to their unique physical and chemical properties,wide bandgap semiconductor materials have shown great potential in the field of optoelectronic devices,and have received more and more research and attention.Zinc gallate(ZnGa_(2)O_(4)) is a wide bandgap semiconductor material,showing broad application prospects in the fields of solar-blind ultraviolet photoelectric detection and X-ray detection for its wide bandgap,unique structure and good thermal stability.In this paper,based on the basic structural characteristics of ZnGa_(2)O_(4),the bandgap,photoelectric properties of ZnGa_(2)O_(4),the preparation methods of Zn_(2)O_(4) bulk single crystal and thin film are introduced in detail.Combined with the recent research results of domestic and foreign scholars,the application prospects of Zn_(2)O_(4) in many fields are summarized,especially the research progress of solar-blind ultraviolet photoelectric detection,memristor,X-ray detection and power devices.Finally,the future development direction of Zn_(2)O_(4) is prospected,and it is pointed out that the quality and performance of Zn_(2)O_(4)materials can be further improved to improve device performance and meet higher level application requirements.

关 键 词：ZnGa_(2)O_(4) 宽禁带半导体 光电性能 制备方法 应用 

分 类 号：O78[理学—晶体学] O47