微纳级GaN基VCSEL中周期反射结构与电子阻挡层的设置作用分析  

Analysis of the Role of Periodic Reflective Structures and Electron Blocking Layer Setup in Micro-Nano GaN-Based VCSEL

作　　者：祝震宇 贾志刚 董海亮[1,2] 许并社 ZHU Zhenyu;JIA Zhigang;DONG Hailiang;XU Bingshe(Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China;Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering,Taiyuan 030024,China;Institute of Atomic and Molecular Science,Shanxi University of Science and Technology,Xi’an 710021,China)

机构地区：[1]太原理工大学新材料界面科学与工程教育部重点实验室,太原030024 [2]山西浙大新材料与化工研究院,太原030024 [3]陕西科技大学材料原子·分子科学研究所,西安710021

出　　处：《人工晶体学报》2024年第8期1337-1343,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(21972103,61904120,61604104,51672185);山西浙大新材料与化工研究院研发项目(2021SX-AT001,2021SX-AT002)。

摘　　要：氮化镓(GaN)基微纳米结构生长技术的成熟为微纳级GaN基垂直腔面发射激光器(VCSEL)的制备提供了新的途径。本文设计了基于GaN基轴向异质结微纳米柱的微纳级VCSEL结构,采用Al_(0.8)Ga_(0.2)N/In_(0.2)Ga_(0.8)N应变补偿结构作为上下分布式布拉格反射镜(DBR),其中Al_(0.8)Ga_(0.2)N层的Al组分远高于传统结构中的电子阻挡层(EBL),能够更好地起到电子阻挡的作用。本文使用商用软件PICS3D构建了电子阻挡层处于不同位置的VCSEL数理模型,并进行数值模拟计算,探索和分析物理机理,解释了不同位置EBL对空穴注入效率的影响。结果表明,采用Al_(0.8)Ga_(0.2)N与In_(0.2)Ga_(0.8)N组成的应变补偿DBR可以更好地提高空穴注入效率,优化器件光电性能。The maturation of GaN-based micro-nano structure growth methodologies have forged an innovative frontier in the fabrication of micro-nano GaN-based vertical cavity surface emitting lasers(VCSELs).This study delineates a sophisticated micro-nano VCSEL architecture founded on GaN axial heterostructures in the configuration of nanowires,incorporating Al_(0.8)Ga_(0.2)N/In_(0.2)Ga_(0.8)N strain-compensated structures as top and bottom distributed Bragg reflector(DBR).Notably,the Al composition in the Al_(0.8)Ga_(0.2)N layer far surpasses that in conventional structures,enhancing its effectiveness as an electron barrier,obviating the need for the electron blocking layer(EBL) traditionally employed as an electron-blocking mechanism.Furthermore,the influence of EBL on hole injection is meticulously examined.In pursuit of refining the hole injection efficiency of GaN-based VCSELs,a numerical model featuring EBL at distinct positions is formulated using commercial software PICS3D,followed by numerical simulations and analyses that delve into the intricate physical mechanisms.The results underscore that the integration of a strain-compensated DBR,comprised of Al_(0.8)Ga_(0.2)N and In_(0.2)Ga_(0.8)N,coupled with the elimination of EBL in traditional configurations,markedly enhances hole injection efficiency,thereby optimizing the optoelectronic performance of the device.

关 键 词：Ⅲ族氮化物 垂直腔面发射激光器 空穴注入效率 微纳米结构 应变补偿DBR 电子阻挡层 

分 类 号：TN248[电子电信—物理电子学]