Controlled fabrication of freestanding monolayer SiC by electron irradiation  

作　　者：笪蕴力 罗瑞春 雷宝 季威 周武 Yunli Da;Ruichun Luo;Bao Lei;Wei Ji;Wu Zhou(School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China;Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-Nano Devices,Renmin University of China,Beijing 100872,China)

机构地区：[1]School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China [2]Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-Nano Devices,Renmin University of China,Beijing 100872,China

出　　处：《Chinese Physics B》2024年第8期31-37,共7页中国物理B（英文版）

基　　金：supports from the Electron Microscopy Center at the University of Chinese Academy of Sciences;financially supported by the Ministry of Science and Technology (MOST)of China (Grant No.2018YFE0202700);the Beijing Outstanding Young Scientist Program (Grant No.BJJWZYJH01201914430039);the China National Postdoctoral Program for Innovative Talents (Grant No.BX2021301);the Fundamental Research Funds for the Central Universities;the Research Funds of Renmin University of China (Grants No.22XNKJ30)。

摘　　要：The design and preparation of novel quantum materials with atomic precision are crucial for exploring new physics and for device applications.Electron irradiation has been demonstrated as an effective method for preparing novel quantum materials and quantum structures that could be challenging to obtain otherwise.It features the advantages of precise control over the patterning of such new materials and their integration with other materials with different functionalities.Here,we present a new strategy for fabricating freestanding monolayer SiC within nanopores of a graphene membrane.By regulating the energy of the incident electron beam and the in-situ heating temperature in a scanning transmission electron microscope(STEM),we can effectively control the patterning of nanopores and subsequent growth of monolayer SiC within the graphene lattice.The resultant SiC monolayers seamlessly connect with the graphene lattice,forming a planar structure distinct by a wide direct bandgap.Our in-situ STEM observations further uncover that the growth of monolayer SiC within the graphene nanopore is driven by a combination of bond rotation and atom extrusion,providing new insights into the atom-by-atom self-assembly of freestanding two-dimensional(2D)monolayers.

关 键 词：monolayer SiC 2D semiconductor in-situ growth in-situ STEM defect engineering graphene nanopores 

分 类 号：O469[理学—凝聚态物理]