Single crystal growth and transport properties of narrow-bandgap semiconductor RhP_(2)  

作　　者：吴德胜 郑萍 雒建林 De-Sheng Wu;Ping Zheng;Jian-Lin Luo(Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Songshan Lake Materials Laboratory,Dongguan 523808,China;Quantum Science Center of Guangdong–Hong Kong–Macao Greater Bay Area,Shenzhen 518045,China)

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]Songshan Lake Materials Laboratory,Dongguan 523808,China [3]Quantum Science Center of Guangdong–Hong Kong–Macao Greater Bay Area(Guangdong),Shenzhen 518045,China

出　　处：《Chinese Physics B》2024年第8期545-549,共5页中国物理B（英文版）

基　　金：supported by the National Key Research and Development Program of China (Grant No.2017YFA0302901);the Strategic Priority Research Program,the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (Grant No.XDB33010100);the National Natural Science Foundation of China (Grant Nos.12134018,11921004,and 11634015);the Foundation of Quantum Science Center of Guangdong–Hong Kong–Macao Greater Bay Area,China (Grant No.QD2301005);the Postdoctoral Science Foundation of China (Grant No.2021M693370);the Synergetic Extreme Condition User Facility (SECUF)。

摘　　要：We report the growth of high-quality single crystals of RhP_(2),and systematically study its structure and physical properties by transport,magnetism,and heat capacity measurements.Single-crystal x-ray diffraction reveals that RhP_(2) adopts a monoclinic structure with the cell parameters a=5.7347(10)A,b=5.7804(11)A,and c=5.8222(11)A,space group P2_(1)/c(No.14).The electrical resistivityρ(T)measurements indicate that RhP_(2) exhibits narrow-bandgap behavior with the activation energies of 223.1 meV and 27.4 meV for two distinct regions,respectively.The temperaturedependent Hall effect measurements show electron domain transport behavior with a low charge carrier concentration.We find that RhP_(2) has a high mobilityμ_(e)~210 cm^(2)·V^(-1)·s^(-1)with carrier concentrations n_(e)~3.3×10^(18)cm^(3) at 300 K with a narrow-bandgap feature.The high mobilityμ_(e) reaches the maximum of approximately 340 cm^(2)·V^(-1)·s^(-1)with carrier concentrations n_^(e)~2×10^(18)cm^(-3)at 100 K.No magnetic phase transitions are observed from the susceptibilityχ(T)and specific heat C_(p)(T)measurements of RhP_(2).Our results not only provide effective potential as a material platform for studying exotic physical properties and electron band structures but also motivate further exploration of their potential photovoltaic and optoelectronic applications.

关 键 词：single crystal growth narrow band system electrical transport high mobilities 

分 类 号：O469[理学—凝聚态物理]