一种交叉耦合型高CMTI电平移位电路设计  

A Cross-coupling Type Level Shift with High CMTI Circuit Design

作　　者：赵媛 赵高峰[1] 郭敏 李瑞静 刘畅 陆佳成 ZHAO Yuan;ZHAO Gaofeng;GUO Min;LI Ruijing;LIU Chang;LU Jiacheng(School of Physics and Electronics,Henan University,Kaifeng,Henan 475000,P.R.China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,P.R.China)

机构地区：[1]河南大学物理与电子学院,河南开封475000 [2]中国科学院微电子研究所,北京100029

出　　处：《微电子学》2024年第3期388-394,共7页Microelectronics

基　　金：河南大学一流学科培育项目(2019YLZDCG02)。

摘　　要：设计了一种新型交叉耦合结构高共模瞬态抗扰度(Common Mode Transient Immunity,CMTI)的电平移位电路。采用窄脉冲信号产生电路降低了的整体功耗;在电流控制型比较器的作用下,很大程度上降低了电平移位电路的传输延时;同时设计了辅助动态电流补偿结构提高电路的CMTI。基于高压0.18μm BCD工艺对电路进行设计与仿真实验,结果表明该电平移位电路的上升和下降延时均小于3.4 ns,CMTI为200 V/ns。A new cross-coupled structure with high Common Mode Transient Immunity(CMTI) level shifting circuit was proposed.A narrow pulse signal generation circuit was adopted to reduce the overall power consumption.With the implementation of a current-controlled comparator,the transmission delay of the level shifting circuit is substantially diminished.Additionally,an auxiliary dynamic current compensation structure was designed to improve the CMTI.The new level shifting circuit is designed and simulated based on a high-voltage 0.18 μm BCD process,and the results show that the rise and fall delays of the designed level shifter are less than 3.4 ns,and the common-mode transient immunity is 200 V/ns.

关 键 词：共模瞬态抗扰度 电平移位电路 窄脉冲产生电路 电流比较器 双重互锁单元 

分 类 号：TN702[电子电信—电路与系统]