基于多MEMS梁的微波功率检测芯片  

Microwave Power Detection Chip Based on Multi MEMS Beams

作　　者：孙浩宇 王德波[1] SUN Haoyu;WANG Debo(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,P.R.China)

机构地区：[1]南京邮电大学集成电路科学与工程学院,南京210023

出　　处：《微电子学》2024年第3期481-486,共6页Microelectronics

基　　金：国家自然科学青年基金资助项目(61704086);中国博士后科学基金资助项目(2017M621692);江苏省博士后基金资助项目(1701131B);江苏省研究生科研与实践创新计划项目(SJCX23_0297)。

摘　　要：为了优化MEMS微波功率检测芯片的微波性能,提高其制备的可靠性,建立了悬臂梁结构在线式MEMS微波功率检测芯片的S参数模型,研究了悬臂梁的数目对微波功率检测芯片微波性能的影响。对多梁结构微波功率检测芯片微波性能进行理论推导和仿真,制备了单梁、双梁结构MEMS微波功率检测芯片样品,并进行了测试。结果表明,在8~12 GHz的频率范围内,单梁结构的微波功率检测芯片回波损耗小于-27 dB,双梁结构的微波功率检测芯片回波损耗小于-18.5 dB,单梁、双梁微波功率检测芯片传输特性变化趋势与理论值基本一致,验证了S参数模型的正确性。To optimize the microwave performance of MEMS microwave power detection chips and enhance their preparation reliability,this study established an S-parameter model for an online MEMS microwave power detection chip with a cantilever beam structure.The impact of the number of cantilever beams on the microwave performance of the microwave power detection chip was investigated.Theoretical derivation and simulation were conducted to analyze the microwave performance of multi-beam structure microwave power detection chips.Additionally,single-beam and double-beam structure MEMS microwave power detection chip samples were prepared for testing.The results reveal that in the frequency range of 8-12 GHz,the reflection loss of the microwave power detection chip with a single-beam structure is less than-27 dB,whereas the reflection loss of the microwave power detection chip with a double-beam structure is less than-18.5 dB.The trend of transmission characteristics changes of the single-and double-beam microwave power detection chips is consistent with the theoretical values,validating the accuracy of the S-parameter model.

关 键 词：微机电系统 功率检测芯片 多梁 S参数 

分 类 号：TN62[电子电信—电路与系统] TP212[自动化与计算机技术—检测技术与自动化装置]