低维半导体微纳激光研究进展  

Review of Low-Dimensional Semiconductor Micro-and Nano-Lasers

作　　者：董红星[1,2] 常浩 高新宇 刘靓 成浩东 李欣洁 于珂 Dong Hongxing;Chang Hao;Gao Xinyu;Liu Liang;Cheng Haodong;Li Xinjie;Yu Ke(Key Laboratory of Materials for High-Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;College of Physics and Optoelectronic Engineering,Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,Zhejiang,China)

机构地区：[1]中国科学院上海光学精密机械研究所强激光材料重点实验室,上海201800 [2]国科大杭州高等研究院物理与光电工程学院,浙江杭州310024

出　　处：《中国激光》2024年第11期454-473,共20页Chinese Journal of Lasers

基　　金：国家自然科学基金(61925506,12374297,62305078);中国博士后科学基金(2022M723267);上海市优秀学术带头人(23XD1404500);上海市扬帆计划(23YF1453900);上海市自然科学基金(23ZR1471500);中国科学院特别研究助理资助项目(2022-4217);杭州市科学技术局(TD2020002)。

摘　　要：半导体微纳激光是纳米技术与纳米光子学交叉研究的前沿领域之一。利用光波长量级的光学谐振腔在光泵浦或电激励下实现激光输出,具有物理尺寸小、可高度集成、低阈值以及低功耗等优点。在未来光子器件、光学集成、光通信以及激光显示等领域具有广泛的应用前景。探讨了低维半导体微纳激光领域所取得的成果与研究进展,并对基于新型钙钛矿材料的微纳激光研究进行了总结概述,最后对低维微纳激光的发展前景进行了展望。Significance In the last half century,electronic devices and integrated circuits have achieved great success in information processing.Moore s Law states that the number of transistors in an integrated circuit doubles approximately every 18 months.However,electronic devices and circuits suffer from inherent problems such as resistance-capacitance time delay and thermal effects.According to Moore s Law,by 2020,fewer than one electron will be contained/included in a transistor,which severely limits the development of integrated circuits.Integrated photonics is considered one of the most promising technologies to replace integrated circuits in the post-Moore era.Compared with electronics,photons have advantages such as ultra-high transmission speeds,high parallelism,and wide bandwidths.Photons exist in a highly coherent state as bosons,allowing for parallel transmission without the fear of external interference.In addition,photons have relatively high information capacity and can carry signals at varying emission intensities,wavelengths,and polarization.Semiconductor micro-and nano-lasers are essential components in photonic integration systems as high-performance light sources.Renowned physicist Thomas M.Baer published an opinion in Nature stating that,in the future,scientists will achieve micro/nano-laser outputs with spot sizes of approximately 1 nm,which will facilitate ultra-highresolution imaging and direct sequencing of biomolecules.Therefore,research on semiconductor micro-and nano-lasers is of significance in fields such as integrated displays,integrated photonics,optical information processing,and biological imaging.Semiconductor micro-and nano-lasers utilize wavelength-scale microcavities to achieve laser emission and have advantages such as small sizes,compact structures,and low cost,making them ideal choices for high-performance light sources.Particularly with the development of information technology and integrated optics,the design and fabrication of high-performance micro-and nano-laser sources have

关 键 词：光学谐振腔 钙钛矿材料 微纳激光 超快光学 片上集成 

分 类 号：TN248[电子电信—物理电子学]