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作 者:Su Yawen Chen Haiwei Zhao Mengwei Niu Yunfei Li Chen Zhang Yong Yang Shaoguang Zhu Shining Hu Xiaopeng
机构地区:[1]National Laboratory of Solid State Microstructures,School of Physics,College of Engineering and Applied Sciences,Nanjing University,Nanjing 210008,Jiangsu,China [2]Zhejiang Laboratory,Hangzhou 311121,Zhejiang,China
出 处:《激光与光电子学进展》2024年第11期50-56,共7页Laser & Optoelectronics Progress
基 金:国家重点研发计划(2022YFA1205100,2022YFF0712800,2019YFA0705000);国家自然科学基金(92163216,92150302,62288101,12304432,12192251);江苏省前沿引领技术基础研究专项(BK20192001)。
摘 要:Conductive ferroelectric domain walls have attracted increasing research interest in the field of nanoelectronics,and the fabrication technique for such domain walls is vital.In this study,we investigated in detail the fabrication of conductive domain walls in x-cut congruent thin-film lithium niobate(TFLN)using an electrical-field poling technique.The ferroelectric domain structures can be controlled through the applied electrical field and applied pulse numbers,and the domain inversion process is related to the conduction characteristics of the domain walls.The domain structures in TFLN are revealed using confocal second-harmonic microscopy and piezoresponse force microscopy.The results provide further directions for the development and application of conductive domain walls in TFLN.
关 键 词:thin-film lithium niobate electric field poling head-to-head/tail-to-tail domain conduction characteristics of domain wall
分 类 号:TB34[一般工业技术—材料科学与工程]
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