BiFeO_(3)/BaTiO_(3)铁电超晶格的电学性能研究  

The electrical properties of BiFeO_(3)/BaTiO_(3)superlattices

作　　者：王志伟 马志军[1] 章天金[2] WANG Zhiwei;MA Zhijun;ZHANG Tianjin(College of Chemistry and Chemical Engineering,Hubei University,Wuhan 430062,China;School of Materials Science and Engineering,Hubei University,Wuhan 430062,China)

机构地区：[1]湖北大学化学化工学院,湖北武汉430062 [2]湖北大学材料科学与工程学院,湖北武汉430062

出　　处：《湖北大学学报（自然科学版）》2024年第5期643-647,共5页Journal of Hubei University：Natural Science

基　　金：微纳电子材料与器件湖北省重点实验室开放基金资助项目(K202206);湖北省自然科学基金(2023AFB827)资助。

摘　　要：采用脉冲激光沉积技术在(001)取向SrTiO_(3)(STO)单晶衬底上生长了BiFeO_(3)/BaTiO_(3)(BFO/BTO)超晶格,研究了超晶格的微结构、铁电性能以及电输运机制。研究表明,BFO/BTO薄膜在STO衬底上外延生长。在薄膜层总厚度相同的条件下,相对于BTO及BFO单层薄膜,BFO/BTO超晶格表现出了更好的铁电性与更低的漏电流,且漏电流随着周期数的增多而减小。空间电荷限制电流(SCLC)是超晶格主导的电输运机制。超晶格中的人工界面对提升其铁电与漏电性能起着重要的作用。BiFeO_(3)/BaTiO_(3)(BFO/BTO)superlattices were grown on(001)-oriented SrTiO_(3)(STO)single-crystal substrates using pulsed laser deposition,and the microstructure,ferroelectric properties,and the electrical transport mechanism of the superlattices were investigated.It is shown that the BFO/BTO films epitaxially grow on STO substrates.Under the condition of the same total thickness of film layers,the BFO/BTO superlattices exhibit better ferroelectricity and lower leakage current relative to BTO and BFO monolayer films,and the leakage current decreases with the increase of the number of cycles.Space charge limiting current(SCLC)is the dominant electrical transport mechanism in superlattices.Artificial interfaces in superlattices play an important role in enhancing their ferroelectric and leakage properties.

关 键 词：铁电超晶格 电输运机制 漏电性能 

分 类 号：TQ174[化学工程—陶瓷工业]