Giant piezotronic effect in ferroelectric field effect transistor  

作　　者：Haiming Zhang Mengshuang Chi Shidai Tian Tian Liang Jitao Liu Xiang Zhang Lingyu Wan Zhong Lin Wang Junyi Zhai 

机构地区：[1]Center on Nanoenergy Research,School of Physical Science&Technology,Guangxi University,Nanning 530004,China [2]Beijing Key Laboratory of Micro-Nano Energy and Sensor,Center for High-Entropy Energy and Systems,Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing 101400,China [3]School of Nanoscience and Engineering,University of Chinese Academy of Science,Beijing 100049,China [4]School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China [5]Georgia Institute of Technology,Atlanta,GA 30332,USA

出　　处：《Nano Research》2024年第9期8465-8471,共7页纳米研究（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.52192611);Beijing Municipal Natural Science Foundation(No.Z230024);the Fundamental Research Funds for the Central Universities.

摘　　要：The piezotronics effect utilizes a piezopotential to modulate and control current in piezo-semiconductors.Ferroelectric materials,as a type of piezoelectric materials,possess piezoelectric coefficients that are significantly larger than those found in conventional piezoelectric materials.Here,we propose a strain modulated ferroelectric field-effect transistor(St-FeFET)utilizing external strain instead of gate voltage to achieve ferroelectric modulation,which eliminates the need for gate voltage.By applying a very small strain(0.01%),the St-FeFET can achieve a maximum on-off current ratio of 1250%and realizes a gauge factor(GF)of 1.19×10^(6),which is much higher than that of conventional strain sensors.This work proposes a new method for realizing highly sensitive strain sensors and presents innovative approaches to the operation methods of ferroelectric field-effect transistors as well as potential applications for coupling of strain sensors and various devices across different fields.

关 键 词：ferroelectric field-effect transistors piezotronics [Pb(Mg_(1/3)Nb_(2/3))O_(3)]_((1-x)^(-))[PbTiO_(3)]_(x)(PMN-PT) strain sensors 

分 类 号：TN32[电子电信—物理电子学]