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作 者:Pengcheng Zhu Shuairong Mu Wenhao Huang Zeye Sun Yuyang Lin Ke Chen Zhifeng Pan Mohsen Golbon Haghighi Roya Sedghi Junlei Wang Yanchao Mao
机构地区:[1]Key Laboratory of Materials Physics of Ministry of Education,School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450001,China [2]School of Mechanical and Power Engineering,Zhengzhou University,Zhengzhou 450001,China [3]Department of Chemistry,Shahid Beheshti University,Tehran 1983969411,Iran
出 处:《Nano Research》2024年第9期8652-8652,共1页纳米研究(英文版)
摘 要:The original article has been corrected due to the incorrect PDF uploaded by the vendor's production.
关 键 词:STRETCH intrinsic ELECTRONIC
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