Origin of the near-room temperature resistance transition in lutetium with H_(2)/N_(2)gas mixture under high pressure  

作　　者：Di Peng Qiaoshi Zeng Fujun Lan Zhenfang Xing Zhidan Zeng Xiaoxing Ke Yang Ding Ho-kwang Mao 

机构地区：[1]Key Laboratory of Materials Physics,Institute of Solid State Physics,Hefei Institutes of Physical Science(HFIPS),Chinese Academy of Sciences,Hefei 230031,China [2]Science Island Branch,Graduate School of University of Science and Technology of China,Hefei 230026,China [3]Center for High Pressure Science and Technology Advanced Research,Shanghai 201203,China [4]Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments(M Free),Shanghai Advanced Research in Physical Sciences(SHARPS),Shanghai 201203,China [5]State Key Laboratory of Superhard Materials,Institute of Physics,Jilin University,Changchun 130012,China [6]College of Materials Science&Engineering,Beijing University of Technology,Beijing 100124,China

出　　处：《National Science Review》2024年第7期20-26,共7页国家科学评论（英文版）

基　　金：supported by Shanghai Science and Technology Committee,China(22JC1410300);Shanghai Key Laboratory of Novel Extreme Condition Materials,China(22dz2260800).

摘　　要：The recent report of room-temperature superconductivity at near-ambient pressure in nitrogen-doped lutetium hydride(Lu-H-N)by Dasenbrock-Gammon et al.[Nature 615,244–250(2023)]has attracted tremendous attention due to its anticipated great impact on technology.However,the results could not be independently reproduced by other groups worldwide in follow-up studies,which elicited intense controversy.Here,we develop a reliable experimental protocol to minimize the extensively concerned extrinsic influences on the sample by starting the reaction from pure lutetium loaded with an H_(2)/N_(2) gas mixture in a diamond anvil cell under different pressures and temperatures and simultaneously monitoring the entire chemical reaction process using in situ four-probe resistance measurements.Therefore,we could repeatedly reproduce the near-room temperature upsurge of electrical resistance at a relatively early stage of the chemical reaction.However,the mechanism is suggested to be a metal-to-semiconductor/insulator transition associated with the structural modulation in the non-stoichiometric Lu-H-N,rather than superconductivity.

关 键 词：SUPERCONDUCTIVITY high pressure lutetium hydride resistance transition metal-to-semiconductor/insulator transition 

分 类 号：O511[理学—低温物理]