封装方式对垂直腔面发射激光器热特性的影响及优化  

Thermal Analysis and Optimization of Vertical-cavity Surface-emitting Lasers with Different Packaging Structures

作　　者：张玮 王延靖 佟海霞 王子烨 陆寰宇 王品尧 佟存柱[1,3] ZHANG Wei;WANG Yanjing;TONG Haixia;WANG Ziye;LU Huanyu;WANG Pinyao;TONG Cunzhu(State Key Laboratory of Luminescence Science and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;University of Chinese Academy of Sciences,Beijing 100049,China;Jlight Semiconductor Technology Co.,Ltd.,Changchun 130031,China)

机构地区：[1]中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,吉林长春130033 [2]中国科学院大学,北京100049 [3]吉光半导体科技有限公司,吉林长春130031

出　　处：《发光学报》2024年第8期1371-1379,共9页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2023YFB3610800);国家自然科学基金(62305330,62105329);吉林省自然科学基金(20240101330JC)。

摘　　要：垂直腔面发射激光器(VCSEL)易于片上集成,是激光雷达、安防照明等系统中的关键光电子器件。但VCSEL器件内部严重的自发热现象会影响器件的输出功率、高速特性和稳定性等,因此VCSEL热管理技术极具重要性,采用优化的封装方式能够有效增加VCSEL的热耗散,是改善VCSEL热性能的重要方法。本文基于有限元(Finite-element method,FEM)计算模型,对不同封装方式和器件表面采用覆盖铜薄层的VCSEL热特性进行数值分析。仿真结果表明,相较于顶出光封装方式,衬底出光(完全刻蚀上下DBR)的倒装焊封装能够有效降低有源区温度,下降超56%。随着器件台面直径逐渐增大,采用顶出光封装方式的器件温度和热阻显著下降,温度下降约50℃,热阻下降超3.25 K/mW;而完全刻蚀上下DBR结构且采用倒装焊封装方式和仅刻蚀PDBR结构且倒装焊封装方式的器件温度和热阻则均呈缓慢上升趋势,器件温度上升约2℃,热阻上升约0.15 K/mW。在器件台面、侧壁及衬底上表面覆盖一层铜可有效降低有源区温度和改善热阻,当覆铜层厚度为3μm时,有源区温度下降43%,热阻下降1.9 K/mW。本文分析了封装方式对VCSEL热特性的影响并提出相应的优化方案,对VCSEL的有效散热封装具有指导意义。Vertical-cavity surface-emitting laser(VCSEL)is easily integrated on-chip and is a key optoelectronic device in systems such as laser radar and security lighting.However,the severe self-heating phenomenon can affect the output power,high-speed characteristics,and stability of the devices.Therefore,thermal management technology is extremely important,and adopting an optimized packaging approach can effectively increase the heat dissipation of VCSELs,which is an important method to improve VCSELs’thermal performance.This article is based on a finite element method(FEM)computational model to numerically analyze the thermal characteristics of VCSELs with different packaging methods and a thin copper layer covering the devices’surface.The simulation results indicate that compared to the top-emitting packaging method,the flip-chip packaging with substrate-emitting(fully etched top and bottom DBR)can effectively reduce the active region temperature,with a reduction rate exceeding 56%.As the device mesa diameter gradually increases,devices using the top-emitting packaging method show a decreasing trend in temperature and thermal resistance,with a temperature reduction 50℃and the thermal resistance reduction of over 3.25 K/mW.However,devices with a fully etched top and bottom DBR structure using flip-chip packaging and devices with only etched P-DBR structure using flip-chip packaging both exhibit a slowly increasing trend in temperature and thermal resistance,with temperature increases of 2℃and thermal resistance increases of 0.15 K/mW.Covering the device mesa,sidewalls,and substrate surfaces with a layer of copper can effectively reduce the temperature of the active region.When the thickness of the copper layer is 3μm,the temperature reduction of the active region is 43%and thermal resisitance reduction is 1.9 K/mW.This article analyzes the impact of packaging methods on the thermal characteristics of VCSELs and proposes optimization solutions,which have guiding significance for the effective thermal packaging

关 键 词：垂直腔面发射激光器(VCSEL) 热特性 温度 热阻 

分 类 号：TN248[电子电信—物理电子学]