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作 者:夏敏峰 张宇 高志良[2] 冯娜 万发雨[1] XIA Minfeng;ZHANG Yu;GAO Zhiliang;FENG Na;WAN Fayu(School of Electronics&Information Engineering,Nanjing University of Information Science&Technology,Nanjing 210044,China;Beijing Oriental Institute of Measurement and Test,Beijing 100094,China)
机构地区:[1]南京信息工程大学电子与信息工程学院,南京210044 [2]北京东方计量测试研究所,北京100094
出 处:《航天器环境工程》2024年第4期468-475,共8页Spacecraft Environment Engineering
基 金:国家重点研发计划项目(编号:2022YFE0122700);北京东方计量测试研究所刘尚合院士专家工作站静电研究基金项目(编号:BOIMTLSHJD20221004)。
摘 要:带电器件模型(CDM)静电放电描述的是器件自身出现静电感应带电进而形成静电放电冲击的过程,是航天器电子产品地面电装/装联过程中面临的主要静电放电风险之一。针对CDM静电放电开展等效电路模型研究与设计,对其充/放电原理及发生过程进行分析;对该等效电路模型进行理论、实验与仿真研究,考察各参数对静电放电波形特性的影响。比对验证表明,等效电路的放电波形与标准波形具有较高的一致性:CDM静电放电表现为上升沿为百ps量级、最大峰值电流为数A量级、正/负周期多次振荡的冲击信号;器件自身等效电容越大则冲击脉冲越强,通路电阻也会明显改变静电冲击波形样态。地面操作中应充分考虑CDM静电放电风险,采取措施降低静电放电对电路和器件可能造成的损伤。Electrostatic discharge(ESD)of charged device model(CDM)characterizes the process in which charges accumulate in the device through electrostatic induction and resulting in ESD impact.It is one of the major ESD risks faced in the ground electronical fitting/assembly by spacecraft electronic products.The equivalent circuit model was investigated and designed to analyze the theory together with the process of charge and discharge of ESD of CDM.The proposed model was studied theoretically and experimentally in addition to the simulation to analyze the influence of various parameters on the ESD waveform characteristics.The comparison and verification show that the discharge waveform of the equivalent circuit has a high consistency with the standard waveform.ESD of CDM exhibits an impulse signal with a rising edge of hundreds of picoseconds,a maximum peak current of several amperes,and multiple oscillations in positive/negative cycles.The larger the equivalent capacitance of the device is,the stronger the impact pulse is.The path resistance also significantly changes the waveform of electrostatic impact.In ground operation,the risk of CDM discharge would need to be fully considered,and measures are recommended to be taken to reduce the possible damage to circuits and devices caused by ESD.
分 类 号:TM206[一般工业技术—材料科学与工程] TM935.4[电气工程—电工理论与新技术]
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