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作 者:Fei Huang Guansheng Lv Huibo Wu Wenhua Chen Zhenghe Feng
机构地区:[1]Department of Electronic Engineering,Tsinghua University,Beijing 100084,China
出 处:《Engineering》2024年第7期223-232,共10页工程(英文)
基 金:supported in part by the National Key Research and Development Program of China(2021YFA0716601);the National Science Fund(62225111).
摘 要:In this paper,a hybrid integrated broadband Doherty power amplifier(DPA)based on a multi-chip module(MCM),whose active devices are fabricated using the gallium nitride(GaN)process and whose passive circuits are fabricated using the gallium arsenide(GaAs)integrated passive device(IPD)process,is proposed for 5G massive multiple-input multiple-output(MIMO)application.An inverted DPA structure with a low-Q output network is proposed to achieve better bandwidth performance,and a single-driver architecture is adopted for a chip with high gain and small area.The proposed DPA has a bandwidth of 4.4-5.0 GHz that can achieve a saturation of more than 45.0 dBm.The gain compression from 37 dBm to saturation power is less than 4 dB,and the average power-added efficiency(PAE)is 36.3%with an 8.5 dB peak-to-average power ratio(PAPR)in 4.5-5.0 GHz.The measured adjacent channel power ratio(ACPR)is better than50 dBc after digital predistortion(DPD),exhibiting satisfactory linearity.
关 键 词:5G Doherty power amplifier Multi-input multi-output Multi-chip modules Hybrid integrated
分 类 号:TN929.5[电子电信—通信与信息系统] TN722.75[电子电信—信息与通信工程]
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