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作 者:Xiangbao Yuan Xufeng Ling Hongyu Wang Chengxia Shen Ru Li Yehao Deng Shijian Chen
机构地区:[1]Chongqing Key Laboratory of Interface Physics in Energy Conversion,College of Physics,Chongqing University,Chongqing 401331,China [2]Key Laboratory of Optoelectronic Technology&Systems(Ministry of Education),College of Optoelectronic Engineering,Chongqing University,Chongqing 400044,China [3]Center of Modern Physics,Institute for Smart City of Chongqing University in Liyang,Liyang 213300,Jiangsu,China
出 处:《Journal of Energy Chemistry》2024年第9期249-258,共10页能源化学(英文版)
基 金:financially supported by the National Natural Science Foundation of China (U22A2078);Fundamental Research Funds for the Central Universities (2022CDJQY-007)
摘 要:The NiO_(x)/perovskite interface in NiO_(x)-based inverted perovskite solar cells(PSCs)is one of the main issues that restrict device performance and long-term stability,as the unwanted interfacial defects and undesirable redox reactions cause severe interfacial non-radiative recombination and open-circuit voltage(Voc)loss.Herein,a series of self-assembled molecules(SAMs)are employed to bind,bridge,and stabilize the NiO_(x)/perovskite interface by regulating the electrostatic potential.Based on systematically theoretical and experimental studies,4-pyrazolecarboxylic acid(4-PCA)is proven as an efficient molecule to simultaneously passivate the NiO_(x)and perovskite surface traps,release the interfacial tensile stress as well as quench the detrimental interface redox reactions,thus effectively suppressing the interfacial non-radiative recombination and enhancing the quality of perovskite crystals.Consequently,the PSCs with 4-PCA treatment exhibited an eminently increased Voc,leading to a significant increase in power conversion efficiency from 21.28%to 23.77%.Furthermore,the unencapsulated devices maintain 92.6%and 81.3%of their initial PCEs after storing in air with a relative humidity of 20%–30%for 1000 h and heating at 65℃for 500 h in a N_(2)-filled glovebox,respectively.
关 键 词:Perovskite solar cells Nickel oxide Interface defects passivation Redox reaction Nonradiative recombination
分 类 号:TM914.4[电气工程—电力电子与电力传动] TB34[一般工业技术—材料科学与工程]
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