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作 者:XIAOYING HE MINGHAO XU SHILIN LIU KUN WANG BOWEN CAO LAN RAO XIANGJUN XIN
机构地区:[1]School of Electronic Engineering and Beijing Key Laboratory of Space-Ground Interconnection and Convergence,Beijing University of Posts and Telecommunications,Beijing 100876,China [2]Key Laboratory of Semiconductor Materials Science,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
出 处:《Photonics Research》2024年第6期1167-1174,共8页光子学研究(英文版)
基 金:National Key Research and Development Program of China(2022YFB3605601);Open Project of Key Laboratory of Semiconductor Materials Science(KLSMS-2204);National Natural Science Foundation of China(61675046,61935005).
摘 要:By combining the good charge transport property of graphene and the excellent photo-carrier generation char-acteristic of perovskite nanocrystal,we propose and demonstrate an ionic-gated synaptic transistor based on CsPbBr_(3)∕graphene heterojunction for bipolar photoresponse.Controlling the potential barrier of the CsPbBr_(3)∕graphene heterojunction by the ionic-gate of the electrical double-layer effect can promote the sepa-ration of photogenerated carriers and effectively retard their recombination.Using the ionic-gate-tunable Fermi level of graphene and the pinning effect of perovskite nanocrystal,the bipolar photocurrent responses correspond-ing to the excitatory and inhibitory short-term and long-term plasticity are realized by adjusting the negative gate bias.A series of synaptic functions including logic operation,Morse coding,the optical memory and electrical erasure effect,and light-assisted re-learning have also been demonstrated in an optoelectronic collaborative path-way.Furthermore,the excellent optical synaptic behaviors also contribute to the handwritten font recognition accuracy of-95%in artificial neural network simulations.The results pave the way for the fabrication of bipolar photoelectric synaptic transistors and bolster new directions in the development of future integrated human ret-inotopic vision neuromorphic systems.
关 键 词:PEROVSKITE IONIC MORSE
分 类 号:TB34[一般工业技术—材料科学与工程] TN32[电子电信—物理电子学]
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