Ka-band thin film lithium niobate photonic integrated optoelectronic oscillator  

作　　者：RUI MA ZIJUN HUANG SHENGQIAN GAO JINGYI WANG XICHEN WANG XIAN ZHANG PENG HAO X.STEVE YAO XINLUN CAI 

机构地区：[1]State Key Laboratory of Optoelectronic Materials and Technologies,School of Electronics and Information Technology,Sun Yat-sen University,Guangzhou 510275,China [2]Photonics Information Innovation Center and Hebei Provincial Center for Optical Sensing,College of Physics Science and Technology,Hebei University,Baoding 071002,China [3]NuVison Photonics,Inc.,Las Vegas,Nevada 89109,USA

出　　处：《Photonics Research》2024年第6期1283-1293,共11页光子学研究（英文版）

基　　金：National Key Research and Development Program of China(2019YFA0705000);National Natural Science Foundation of China(62293523);Advanced Talents Program of Hebei University(521000981006);Natural Science Foundation of Hebei Province(F2021201013).

摘　　要：Photonics integration of an optoelectronic oscillator(OEO)on a chip is attractive for fabricating low cost,compact,low power consumption,and highly reliable microwave sources,which has been demonstrated recently in silicon on insulator(SOI)and indium phosphide(InP)platforms at X-band around 8 GHz.Here we demonstrate the first integration of OEOs on the thin film lithium niobate(TFLN)platform,which has the advantages of lower Vπ,no chirp,wider frequency range,and less sensitivity to temperature.We have successfully realized two different OEOs operating at Ka-band,with phase noises even lower than those of the X-band OEOs on SOI and InP platforms.One is a fixed frequency OEO at 30 GHz realized by integrating a Mach–Zehnder modulator(MZM)with an add-drop microring resonator(MRR),and the other is a tunable frequency OEO at 20–35 GHz realized by integrating a phase modulator(PM)with a notch MRR.Our work marks the first step of using TFLN to fabricate integrated OEOs with high frequency,small size,low cost,wide range tunability,and potentially low phase noise.

关 键 词：OPTOELECTRONIC MODULATOR RESONATOR 

分 类 号：TN25[电子电信—物理电子学] TN752