钽酸锂单晶薄膜的退火处理与微结构分析  

Study of Thermal Annealing and Microstructure Analysis on Crystal-Ion-Sliced LiTaO_(3) Single Crystal Thin Film

作　　者：杨杰[1] 高艺卓 朱代磊 帅垚[1,2] 吴传贵[1,2] 罗文博[1,2] YANG Jie;GAO Yizhuo;ZHU Dailei;SHUAI Yao;WU Chuangui;LUO Wenbo(School of Integrated Circuit Science and Engineering,University of Electronic Science and Technology,Chengdu 611731,China;State Key Laboratory of Electronic Thin Film and Integrated Devices,University of Electronic Science and Technology,Chengdu 611731,China)

机构地区：[1]电子科技大学集成电路科学与工程学院,四川成都611731 [2]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都611731

出　　处：《压电与声光》2024年第4期545-549,共5页Piezoelectrics & Acoustooptics

摘　　要：离子注入剥离技术制备的钽酸锂单晶薄膜可用于高品质因数和低热漂移窄带射频滤波器,但高能离子注入使钽酸锂薄膜存在缺陷及晶格损伤,限制了器件性能的提升,无法充分发挥单晶薄膜的性能优势。使用退火工艺对钽酸锂薄膜进行损伤修复,采用拉曼光谱对不同温度退火的钽酸锂薄膜进行表征测试,分析了退火温度对钽酸锂薄膜成分和缺陷的影响。结果表明,退火处理修复了钽酸锂薄膜的锂空位缺陷,降低了钽酸锂薄膜的氧空位等成分偏析。Lithium tantalate(LiTaO_3) single-crystal thin films are utilized for high-Q and low thermal drift narrow-band RF filters based on crystal ion slicing(CIS) technology.However,defects and lattice damage caused by high-energy ion implantation in LiTaO_(3) films hinder the enhancement of device performance.In this study,we employed a thermal annealing process to repair the damage in LiTaO_(3) films and characterize the defects using Raman spectroscopy.Additionally,we analyzed the impact of annealing temperature on the composition and defects of LiTaO_(3) films.The results demonstrate that thermal annealing effectively repairs lithium vacancy defects and reduces oxygen vacancies in LiTaO_(3) films.

关 键 词：钽酸锂单晶薄膜 退火处理 拉曼光谱 晶体缺陷 薄膜成分偏析 

分 类 号：TN384[电子电信—物理电子学] TN305