Online Monitoring Method for Junction Temperature of SiC MOSFETs based on Temperature Sensitive Electrical Parameter  

作　　者：Han Cao Puqi Ning Yunhao Huang Xuhui Wen 

机构地区：[1]Wuhan Second Ship Design and Research Institute,Wuhan 430205,China [2]Key Laboratory of Power Electronics and Electric Drive,Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China [3]Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China [4]University of Chinese Academy of Sciences,Beijing 100049,China [5]Collaborative Innovation Center of Electric Vehicles in Beijing,Beijing 100081,China

出　　处：《CSEE Journal of Power and Energy Systems》2024年第4期1799-1807,共9页中国电机工程学会电力与能源系统学报（英文）

基　　金：supported by the National Key R&D Program of China(2016YFB0100600);the Key Program of Bureau of Frontier Sciences and Education,Chinese Academy of Sciences(QYZDBSSW-JSC044)。

摘　　要：Compared to Si devices,the junction temperature of SiC devices is more critical due to the reliability concern introduced by immature packaging technology applied to new material.This paper proposes a practical SiC MOSFET junction temperature monitoring method based on the on-state voltage$\\boldsymbol{V}_{\\mathbf{ds}(\\mathbf{on})}$measurement.In Section II of the paper,the temperature sensitivity of the on-state voltage$\\boldsymbol{V}_{\\mathbf{ds}(\\mathbf{on})}$is characterized.The hardware of the measurement system is set up in Section III,which consists of an On-state Voltage Measurement Circuit(OVMC),the sampling and isolation circuit.Next,a calibration method based on the self-heating of the SiC MOSFET chip is presented in Section IV.In the final Section,the junction temperature is monitored synchronously according to the calibration results.The proposed method is applied to a Buck converter and verified by both an Infrared Radiation(IR)camera and a Finite Element Analysis(FEA)tool.

关 键 词：Junction temperature Silicon Carbide(SiC)MOSFET TSEP 

分 类 号：TM73[电气工程—电力系统及自动化]