Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si(001)substrates via laser-patterned templates  

作　　者：Pengfei Qu Peng Jin Guangdi Zhou Zhen Wang Zhanguo Wang 

机构地区：[1]Laboratory of Solid-State Optoelectronic Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2024年第9期4-6,共3页半导体学报（英文版）

基　　金：supported by the National Key Research and Development Program of China(Grant No.2022YFB3608600);the Beijing Municipal Science and Technology Commission(Grant No.Z181100004418009);the National Natural Science Foundation of China(Grant No.61927806)。

摘　　要：As an ultra-wide bandgap semiconductor,diamond garners significant interest due to its exceptional physical properties^([1–3]).These superior characteristics make diamonds highly promising for applications in power electronics^([4]),deep-ultraviolet detectors^([5]),high-energy particle detectors^([6]),and quantum devices based on color centers^([7]).

关 键 词：TEMPLATE exceptional DIAMOND 

分 类 号：TN304[电子电信—物理电子学]