Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates  

作　　者：Leonarde N.Rodrigues Wesley F.Inoch Marcos L.F.Gomes Odilon D.D.Couto Jr. Bráulio S.Archanjo Sukarno O.Ferreira 

机构地区：[1]Physics Department,Federal University of Viçosa,Viçosa,36570-900,Minas Gerais,Brazil [2]Instituto de Física Gleb Wataghin,Universidade Estadual de Campinas,Campinas,13083-859,São Paulo,Brazil [3]National Institute of Metrology Quality and Technology(Inmetro),Materials Metrology Division(DIMAT),Xerém,2525-020,Rio de Janeiro,Brazil

出　　处：《Journal of Semiconductors》2024年第9期28-35,共8页半导体学报（英文版）

基　　金：the financial support by the Brazilian funding agencies CAPES, CNPq (306201/2022-4);FAPEMIG (APQ-00371-17, APQ-02500-22, APQ-00388-22, and RED00223-23);FAPESP (2021/06803-4)。

摘　　要：This work shows that despite a lattice mismatch of almost 20%, CdMnTe/CdTe/CdMnTe heterostructures grown directly on Si(111) have surprisingly good optical emission properties. The investigated structures were grown by molecular beam epitaxy and characterized by scanning transmission electron microscopy, macro-and micro-photoluminescence. Low temperature macro-photoluminescence experiments indicate three emission bands which depend on the CdTe layer thickness and have different confinement characteristics. Temperature measurements reveal that the lower energy emission band (at 1.48 eV)is associated to defects and bound exciton states, while the main emission at 1.61 eV has a weak 2D character and the higher energy one at 1.71 eV has a well-defined (zero-dimensional, 0D) 0D nature. Micro-photoluminescence measurements show the existence of sharp and strongly circularly polarized (up to 40%) emission lines which can be related to the presence of Mn in the heterostructure. This result opens the possibility of producing photon sources with the typical spin control of the diluted magnetic semiconductors using the low-cost silicon technology.

关 键 词：CdMnTe/CdTe/CdMnTe heterostructure CdTe/CdMnTe quantum emitters quantum dot-like emission silicon(111)substrate 

分 类 号：O469[理学—凝聚态物理]