Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors  

作　　者：Shijie Pan Shiwei Feng Xuan Li Zixuan Feng Xiaozhuang Lu Kun Bai Yamin Zhang 

机构地区：[1]College of Microelectronics,Beijing University of Technology,Beijing 100124,China [2]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

出　　处：《Journal of Semiconductors》2024年第9期70-75,共6页半导体学报（英文版）

基　　金：supported by the Key Program of the National Natural Science Foundation of China (Grant No. 62334002);the National Natural Science Foundation of China (Grant No. 62174008)。

摘　　要：In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors(HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 10^(14) cm^(-2), the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 10^(12) to 1 × 10^(14) cm^(-2), and we noticed that the drain-source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.

关 键 词：AlGaN/GaN HEMT electron radiation performance degradation device damage 

分 类 号：TN386[电子电信—物理电子学]