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作 者:李新[1] 高梦真 杨森林[1] LI Xin;GAO Mengzhen;YANG Senlin(School of Information Science and Engineering,Shenyang University of Technology,Shenyang110870,China)
机构地区:[1]沈阳工业大学信息科学与工程学院,辽宁沈阳110870
出 处:《电子元件与材料》2024年第7期878-883,共6页Electronic Components And Materials
摘 要:针对传统带隙基准存在温度漂移大以及电源抑制比低的问题,提出了一种新型的带曲率补偿的带隙基准电压源。采用基极电流补偿以及曲率补偿技术对传统带隙基准结构进行改进。设计了低失配改进电路、低温漂改进以及启动电路等。利用共源共栅电流镜技术和负反馈网络保证带隙基准输出电压,极大程度降低了运放失调电压对带隙基准电压的干扰,实现了低温漂特性。基于东部高科0.18μm BCD工艺,在Cadence Spectre下进行仿真。仿真结果表明:该带隙基准电路在-40~150℃温度范围内,输入电压为5 V,输出电压稳定在1.192 V;温度系数为4.84×10^(-6)/℃;在低频时电源抑制比为-78 dB。To address the significant temperature drift and low power supply rejection ratio of conventional bandgap references,a novel bandgap reference voltage source was proposed with band curvature compensation.Both base current and curvature compensation techniques were used to improve the traditional bandgap reference structure.The design includes a low-mismatch improvement circuit,low-temperature drift enhancement,and start-up circuitry.The bandgap reference output voltage was ensured by using cascode current mirror technique and negative feedback network,greatly reducing the effect of operational amplifier offset voltage on the bandgap reference voltage and achieving low-temperature drift characteristics.Utilizing the 0.18μm BCD process at Eastern Hi-Tech,simulations were conducted using Cadence Spectre software.Simulation demonstrates that the output voltage can be stabilized at 1.192 V from-40℃to 150℃at an input voltage of 5 V.The measured temperature coefficient is 4.84×10^(-6)/℃,and the power-supply rejection ratio is-78 dB at low frequencies.
关 键 词:带隙基准 基极电流补偿 曲率补偿 低温度系数 电源抑制比
分 类 号:TN432[电子电信—微电子学与固体电子学]
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