基于电-热-结构耦合分析的SiC MOSFET可靠性研究  

Reliability study of SiC MOSFET based on electro-thermo-structural coupling analysis

作　　者：黄天琪 刘永前[1] HUANG Tianqi;LIU Yongqian(School of New Energy,North China Electric Power University,Beijing 102206)

机构地区：[1]华北电力大学新能源学院,北京102206

出　　处：《电气技术》2024年第8期27-34,共8页Electrical Engineering

摘　　要：作为应用前景广阔的功率器件,SiC金属氧化物半导体场效应晶体管(MOSFET)的可靠性分析至关重要。基于结构几何、材料特性和边界条件的建模方法可以显著缩短失效分析周期。考虑器件电阻随温度变化的特性,构建电-热-结构耦合的有限元模型,针对健康状态及不同失效模式进行温度和应力研究。结果表明,功率循环过程中键合线与芯片连接处受到的热应力最大,焊料层与芯片接触面的边缘位置次之;键合线失效对器件寿命影响最大,且焊料层中心空洞产生的应力大于边缘空洞产生的应力。仿真结果可为提升器件可靠性提供重要参考。As a power device with promising applications,the reliability analysis of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)is crucial.Modeling methods based on structural geometry,material properties,and boundary conditions can significantly shorten the failure analysis cycle.A coupled electrico-thermo-structural finite element model is constructed,considering the temperature-dependent characteristics of the device resistance.Temperature and stress studies are conducted for both healthy state and different failure modes.The results show that during power cycling the highest thermal stress occurs at the connection between the bond wire and the chip,followed by the edge of the contact surface between the solder layer and the chip.Bond wire failure has the largest impact on the device life,and the stresses generated by the void in the centre of the solder layer are larger than those generated by the void at the edge.The simulation results provide valuable insights for improving device reliability.

关 键 词：SiC金属氧化物半导体场效应晶体管(MOSFET) 有限元模型 电-热-结构耦合 键合线失效 焊料层失效 

分 类 号：TN386[电子电信—物理电子学]