量子点发光二极管传输层研究进展  

Research progress of quantum dots LED transmission layer

作　　者：李晓云[1] 杜晓宇 LI Xiaoyun;DU Xiaoyu(School of Electronic and Information Engineering,Tiangong University,Tianjin 300378,China)

机构地区：[1]天津工业大学电子与信息工程学院,天津300387

出　　处：《传感器与微系统》2024年第9期1-5,共5页Transducer and Microsystem Technologies

摘　　要：量子点发光二极管(QLED)凭借着色纯度好、半最大发射带宽窄、无机成分寿命长、合成工艺简单等优点,在显示和固态照明等领域表现出广泛的应用潜力。近年来,QLED的性能提升迅速,有取代有机发光二极管(OLED)的趋势。QLED的传输层材料的选择对提高器件的载流子注入起到了至关重要的作用。传输层的化学性质及其界面也会对器件的稳定性和寿命产生影响。本文总结了QLED传输层的研究现状,分析了制约QLED性能的因素,介绍了其性能改进的方向方法,并展望了QLED的未来发展。Quantum dots light-emitting diode(QLED)show a wide range of potential applications in display and solid-state lighting due to advantages of good coloration purity,narrow half-maximum emission bandwidth,long life of inorganic components,and simple synthesis process.In recent years,the performance of QLED is improved rapidly,and there is a trend to replace organic LED(OLED).The selection of transmission layer materials of QLED plays a crucial role in improving the carrier injection of the device.The chemical property of the transmission layer and its interface can also have an impact on device stability and lifetime.Research status of QLED transmission layer is summarized,by analyzing the factors that restrict performance of QLED,the direction and method of its performance improvement are introduced,and the future development of QLED is looked forward to.

关 键 词：量子点发光二极管 电子传输层 空穴传输层 

分 类 号：TN383.1[电子电信—物理电子学]