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作 者:刘玉 高定成 薛忠营[2] 常永伟 Liu Yu;Gao Dingheng;Xue Zhongying;Chang Yongwei(School of Microelectronics,University of Science and Technology of China,Hefei 230026,China;State Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China)
机构地区:[1]中国科学技术大学微电子学院,合肥230026 [2]中国科学院上海微系统与信息技术研究所集成电路材料全国重点实验室,上海200050
出 处:《半导体技术》2024年第9期813-817,共5页Semiconductor Technology
基 金:国家自然科学基金(62304232)。
摘 要:硅基电子器件在高温、高功率、射频领域应用时面临热管理的挑战。为解决其散热和射频损耗问题,采用微转印技术在常温常压下将单晶硅薄膜转移至金刚石衬底上,制备出新型集成电路材料——金刚石上硅(SOD)。实验结果表明,转移的单晶硅薄膜表面平整、无明显损伤,保持了其原有的完整性。透射电子显微镜的观察结果进一步显示,金刚石与硅之间的界面结合紧密,不存在纳米级间隙。界面热阻测试结果显示,SOD样品的有效界面热阻(R_(EI))为30.30m^(2)·K/GW,明显优于SOI样品的R_(EI)(376.78m^(2)·K/GW)。该研究验证了SOD材料在热管理方面的潜力,也为未来新型硅基器件的设计与应用提供了参考。The silicon-based electronic devices face challenges of thermal management in high temperature,high power and radio frequency(RF)applications.To address the issues of heat dissipation and RF loss,a new type of integrated circuit material,Si-on-diamond(SOD),was prepared by transferring the monocrystalline silicon film onto diamond substrates at room temperature and pressure using micro-transfer printing technique.The experimental results show that the transferred monocrystalline silicon film is smooth and free of obvious surface damage,maintaining its original integrity.The transmission electron microscope results further reveal that the interface between diamond and silicon is tightly bonded without nanoscale gaps.The interfacial thermal resistance test results indicate that the effective interfacial thermal resistance(R_(EI))of the SOD sample is 30.30 m^(2).K/CW,which is significantly better than that of the SOI sample(376.78 m^(2).K/GW).This study verifies the potential of SOD material in thermal management and provides reference for the design and application of future novel silicon-based devices.
关 键 词:金刚石 金刚石上硅(SOD) 热管理 微转印 界面热阻
分 类 号:TN304.055[电子电信—物理电子学]
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