在VLSI制造中基于辅助图形的灰度光刻形成三维结构  

3D Structures Formulation by Grayscale Lithography with Assist Features in VLSI Manufacturing

作　　者：王雷 张雪 王辉 Wang Lei;Zhang Xue;Wang Hui(Shanghai HuaHong Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China)

机构地区：[1]上海华虹宏力半导体制造有限公司,上海201203

出　　处：《半导体技术》2024年第9期832-837,共6页Semiconductor Technology

摘　　要：半导体器件从单一的二维尺度微缩转向更复杂的三维物理结构,而其传统的制造方法与以硅基逻辑或存储器为主的超大规模集成电路(VLSI)制造工艺的兼容性越来越差。灰度光刻是一种实现三维结构的可行技术方案,但因物理尺寸受限和大规模制造成本过高,无法被直接应用于超大规模集成电路制造。提出了一种基于辅助图形的灰度光刻技术,通过辅助图形而非传统灰度光刻调整光源或透过介质的方法来调整光强分布,并结合光刻胶筛选方法,实现了仅通过调整单一光刻工艺模块,就使现有超大规模集成电路制造工艺生产线可低成本地兼容三维结构器件制造。制作了三维结构的微电子机械系统(MEMS)运动传感器,从而验证了所提出工艺的可行性。Semiconductor devices shift from single two-dimensional scale miniaturization to more complex three-dimensional physical structures,while traditional fabrication methods for such devices are becoming less compatible with the fabrication processes of silicon based logic or memory based very-largescale integrated circuit(VLSI).Grayscale lithography is a feasible technological solution for realizing three-dimensional structures,but it cannot be directly applied to the fabrication of very-large-scale integrated circuits due to the limited physical size and high cost of large-scale fabrication.A grayscale lithography technique based on assist features was proposed,and the light intensity distribution was adjusted through assist features instead of the traditional grayscale lithography to adjust the light source or transmittance medium.Besides,combined with the photoresist screening method,the compatibility of the existing production line of the very-large-scale integrated circuit with the fabrication of three-dimensional structure devices at a low cost was realized by only adjusting the single photolithography process module.The feasibility of the proposed process was verified by fabricating a three-dimensional microelectromechanical system(MEMS)motion sensor.

关 键 词：超越摩尔定律 超大规模集成电路(VLSI)制造 灰度光刻 辅助图形 微电子机械系统(MEMS) 分立器件 

分 类 号：TN405.983[电子电信—微电子学与固体电子学]