一种适用于充电机的IGBT高频驱动电路  

An IGBT High-Frequency Drive Circuit for Charger

作　　者：艾胜胜 李康乐 王雷 田地 许克磊 常超 Ai Shengsheng;Li Kangle;Wang Lei;Tian Di;Xu Kelei;Chang Chao(CRRC Xi'an Yongdian Jietong Electric Co.,Ltd.,Xi'an 710016,China)

机构地区：[1]西安中车永电捷通电气有限公司,西安710016

出　　处：《半导体技术》2024年第9期844-850,共7页Semiconductor Technology

摘　　要：随着国内地铁行业的快速发展,辅助系统充电机所用绝缘栅双极晶体管(IGBT)的开关频率已经可以达到上百千赫兹,一般的驱动器已经无法满足高频条件下对驱动信号的要求,IGBT高频驱动成为当前的研究焦点。基于MOS管开关速度快的特性以及比较器高精度、良好的稳定性、灵敏性、开关等特性,设计了一款IGBT高频驱动器。比较器把接收到的驱动信号转换为两路不同的驱动信号传输至PMOS管与NMOS管,从而实现IGBT高频驱动功能。搭建实验平台,经测试IGBT高频驱动开关频率可以实现100 kHz。和传统驱动电路对比,IGBT开关频率提高了50 kHz,实现了IGBT开关频率高频化。研究成果对大功率IGBT及SiC MOSFET驱动技术的应用具有一定的参考价值。With the fast development of the domestic subway industry,the switching frequency of the insulated gate bipolar transistor(IGBT)used in auxiliary system charger can reach hundreds of kilohertz,and the general driver is unable to meet the requirements of drive signal under high-frequency conditions,so IGBT high-frequency drive has become the focus of the current research.A high-frequency IGBT driver was designed based on the fast switching speed of MOS transistors and high precision,good stability,sensitivity and switching characteristics of comparators.The comparator converts the received driving signal into two different driving signals for PMOS and NMOS transistors,thereby achieving highfrequency driving function of the IGBT.An experimental platform was built,and the test results show that the IGBT high-frequency driving switch frequency can achieve 100 kHz.Compared with the traditional driver circuit,the switching frequency of the IGBT is improved by 50 kHz,realizing high frequency of IGBT switching frequency.The research result has certain reference value for the application of drive technology for high-power IGBT and SiC MOSFET.

关 键 词：充电机 绝缘栅双极晶体管(IGBT) 高频 驱动器 欠压监测 

分 类 号：TN78[电子电信—电路与系统]