环氧树脂高温热老化反应对器件功率循环寿命的影响机理  被引量:1

Influence Mechanism of High-Temperature Thermal Aging Reaction of Epoxy Resin on Power Cycling Lifetime of Devices

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作  者:王作艺 严雨行 邓二平 莫申扬 吴立信 吴天华 黄永章 Wang Zuoyi;Yan Yuxing;Deng Erping;Mo Shenyang;Wu Lixin;Wu Tianhua;Huang Yongzhang(State Key Laboratory of Alternate Electrical Power System woith Renewable Energy Sources(North China Electric Poncer Unirersity),Bejing 102206,China;State Key Laboraory of Highg-Efficiency and High Qualiy Conversion,Hefei University of Technology,Hefei 230009,China;Institute of Energy,Hefei Comprehensive National Science Center,Hefei 230051,China;NARI Group(State Grid Elecric Power Research Institute)Corporation,Nanjing 211106,China)

机构地区:[1]新能源电力系统全国重点实验室(华北电力大学),北京102206 [2]合肥工业大学电能高效高质转化全国重点实验室,合肥230009 [3]合肥综合性国家科学中心能源研究院,合肥230051 [4]南瑞集团(国网电力科学研究院)有限公司,南京211106

出  处:《半导体技术》2024年第9期858-866,872,共10页Semiconductor Technology

基  金:国家自然科学基金(52007061);国家电网有限公司总部管理科技项目(5108-202218280A-2-110-XG)。

摘  要:分立器件主要使用环氧树脂封装材料以保护芯片免受机械损伤和环境腐蚀,但环氧树脂材料的热稳定性较差,在高温环境下易发生化学反应,影响器件的性能。因此,一般要求器件的工作温度不能超过环氧树脂的玻璃化转变温度。以SiCMOSFET分立器件为研究对象,通过功率循环试验深入探究高温存储对器件功率循环寿命的影响。结果表明,经高温存储后器件的寿命得到显著提升。此外,通过对高温存储前后环氧树脂材料进行热机械分析,发现环氧树脂材料的热稳定性经高温存储后得到增强。最后,通过建立有限元仿真模型,深入分析高温存储对器件芯片表面应变及键合线应变的影响,发现高温存储后器件芯片表面应变及键合线应变变小,解释了高温存储对器件寿命提升的影响机理。Discrete devices primarily use epoxy resin packaging material to protect the chip from mechanical damage and environmental corrosion.However,the thermal stability of epoxy resin is poor,and it is prone to chemical reactions in high-temperature environment,affecting the performance of devices.Therefore,it is generally required that the operating temperature of the device should not exceed the glass transition temperature of the epoxy resin.With SiC MOSFET discrete devices as the research object,the influence of high-temperature storage on the power cycling lifetime of the devices was deeply explored through power cycling test.The results show that the lifetime of the devices is significantly improved after high-temperature storage.In addition,the thermal mechanical analysis of the epoxy resin before and after high-temperature storage reveals that the thermal stability of the epoxy resin material is enhanced after hightemperature storage.Finally,by establishing a finite element simulation model,the influences of hightemperature storage on the device chip surface strain and the bonding wire strain were deeply analyzed.It is found that the device chip surface strain and the bonding wire strain are reduced after high-temperature storage,which explains the influence mechanism of high-temperature storage on the device lifetime improvement.

关 键 词:功率循环寿命 SiCMOSFET分立器件 环氧树脂 高温存储 玻璃化转变温度 

分 类 号:TN306[电子电信—物理电子学]

 

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