强激光场对低维半导体系统的调制效应  

Modulation Effect of High Laser Field on Low Dimensional Semiconductor System

作　　者：孙昌宜 Sun Changyi(School of Physics and Materials Science,Guangzhou University,Guangzhou,China)

机构地区：[1]广州大学物理与材料科学学院,广东广州

出　　处：《科学技术创新》2024年第19期220-223,共4页Scientific and Technological Innovation

摘　　要：强激光场与材料相互作用时产生的现象是非线性光学领域的研究热点。自激光器问世以来,已经有不少针对某一具体材料结构在特定激光场下非线性光学性质的研究,但关于材料结构与激光参数取值关系的研究比较少。本文研究了激光场对半导体材料的光学性质的调制范围,并发现随着激光修正参数增加,光吸收、光折射峰值位置发生红移现象。The interaction between intense laser field and material is a phenomenon which is a research hotspot in the field of nonlinear optics.Since the advent of lasers,there have been a lot of studies on the nonlinear optical properties of a specific material structure under a specific laser field,but there are few studies on the relationship between the material structure and the value of laser parameters.In this paper,the modulation range of laser field on the optical properties of semiconductor materials is studied,and it is found that with the increase of laser correction parameters,the peak position of light absorption and light refraction occurs redshift.

关 键 词：强激光场 半导体材料 光吸收系数 折射率变化 

分 类 号：O431.2[机械工程—光学工程]