工艺参数对蓝宝石晶片表面质量影响数值仿真  

Numerical Simulation of Infl uence of Process Parameters on Surface Quality of Sapphire Wafer

作　　者：鲁雅荣 康森 李宁 Lu Yarong;Kang Sen;Li Ning(TDG Yinxia New Material Co.,Ltd.,Ningxia,750021;School of Material Science&Engineering,North Minzu University,Ningxia,750021)

机构地区：[1]天通银厦新材料有限公司,宁夏750021 [2]北方民族大学材料科学与工程学院,宁夏750021

出　　处：《当代化工研究》2024年第16期170-172,共3页Modern Chemical Research

基　　金：银川市科技计划项目“多线切割蓝宝石晶体残余应力及工艺改善研究”(项目编号:2022ZDGX15)。

摘　　要：蓝宝石作为一种重要的技术晶体,由于其良好的物理、化学及光学性能在航天航空、海洋装备、国防军工领域都有着广泛的运用。切割是晶片处理的第一道工序,目前广泛采用多线切割技术来完成,该技术极大地提高了生产效率。但晶片表面质量受切割工艺参数的影响较大,本文通过数值仿真技术模拟不同线速度和工件进给速度对晶片表面质量的影响,找出最优加工工艺,指导生产实际。Sapphire is an important technical crystal.Because of its good physical,chemical and optical properties,it has been widely used in aerospace,marine equipment,national defense and military fields.Cutting is the first process of wafer processing.At present,multi-wire cutting technology is widely used to complete the process,which greatly improves the production efficiency.However,the chip surface quality is greatly affected by the cutting process parameters.In this paper,the effects of different linear speeds and work piece feed speeds on the chip surface quality are simulated by numerical simulation technology,and the optimal processing technology is found to guide the production practice.

关 键 词：蓝宝石 多线切割 翘曲度 仿真 

分 类 号：TG174.44[金属学及工艺—金属表面处理]