XOR spin logic operated by unipolar current based on field-free spin-orbit torque switching induced by a lateral interface  

作　　者：Yan-Ru Li Mei-Yin Yang Guo-Qiang Yu Bao-Shan Cui Jin-Biao Liu Yong-Liang Li Qi-Ming Shao Jun Luo 

机构地区：[1]Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences(IMECAS),Beijing 100029,China [2]University of Chinese Academy of Sciences(UCAS),Beijing 100049,China [3]Songshan Lake Materials Laboratory,Dongguan 523808,China [4]Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [5]Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education,Lanzhou University,Lanzhou 730000,China [6]Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology,Hong Kong 999077,China

出　　处：《Rare Metals》2024年第8期3868-3875,共8页稀有金属（英文版）

基　　金：financially supported by the Chinese Academy of Sciences (Nos.XDA18000000 and Y201926);the Youth Innovation Promotion Association of CAS (No.2020118);Beijing Municipal Natural Science Foundation (No.4244071);the Funding Support from Research Grants Council—Early Career Scheme (No.26200520)。

摘　　要：Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures.In particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential for low-power stateful logic circuits in the next generation.In this study,we successfully obtained the XOR logic gate by utilizing a spin-orbit torque device with a lateral interface,which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic anisotropy.The angle of the lateral interface is set at 45°relative to the current direction,leading to the competition between symmetry breaking and current-driven Néel-type domain wall motion.Consequently,the field-free magnetic switching reversed is realized by the same sign of current amplitude at this interface.Based on this field-free magnetic switching behavior,we successfully proposed an XOR logic gate that could be implemented using only a single spin-orbit torque Hall device.This study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.

关 键 词：Filed-free magnetic switching Spin-orbit torque XOR logic gate Lateral interface 

分 类 号：O469[理学—凝聚态物理]