Graphene oxide/Al_(2)O_(3)-based diffusive memristor cells:enabling robust crossbar arrays for multidisciplinary applications  

作　　者：Chen Liu Jun-Cheng Jin Yi-Ke Xiao Xin-Xin Wang Ping-Yuan Yan Yan-Qiang Cao Li-Yong Jiang Chuan-Xiang Sheng Ye-Feng Yu 

机构地区：[1]School of Microelectronics,Nanjing University of Science and Technology,Nanjing 210094,China [2]School of Science,Nanjing University of Science and Technology,Nanjing210094,China [3]School of Information Science and Technology,Fudan University,Shanghai 200433,China

出　　处：《Rare Metals》2024年第8期3997-4005,共9页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (No.62074079);the Fundamental Research Funds for the Central Universities (No.30923010603)。

摘　　要：A memristor crossbar array (MCA) has emerged as a cutting-edge platform for advanced memory and neuromorphic computing hardware,offering unrivaled bit-level storage density.A diffusive memristor cell (DMC) is particularly well-suited for MCA integration due to its inherent threshold switching characteristics as a selector,effectively addressing current sneak path issues.Although DMC's potential is acknowledged,it necessitates furtherexploration of their practical applicability.

关 键 词：CROSSBAR ARRAYS offering 

分 类 号：TN60[电子电信—电路与系统]