Long-wave infrared emission properties of strain-balanced InAs/In_(x)Ga_(1-x)As_(y)Sb_(1-y)type-Ⅱsuperlattice on different substrates  

作　　者：Chao Shi Xuan Fang Hong-Bin Zhao Deng-Kui Wang Xi Chen Dan Fang Dong-Bo Wang Xiao-Hua Wang Jin-Hua Li 

机构地区：[1]State Key Laboratory of High Power Semiconductor Lasers,School of Physics,Changchun University of Science and Technology,Changchun 130022,China [2]State Key Laboratory of Advanced Materials for Smart Sensing,China General Research Institute for Nonferrous Metals,Beijing 100088,China [3]Department of Opto-Electronic Information Science,School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China

出　　处：《Rare Metals》2024年第7期3194-3204,共11页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(Nos.62074018,62174015 and 62275032);the Developing Project of Science and Technology of Jilin Province(No.20210509061RQ);the Natural Science Foundation of Jilin Province(No.20210101473JC);National Key R&D Program of China(No.2021YFB3201901);The Natural Science Foundation of Chongqing China(No.cstc2021jcyjmsxmX1060);supported by R&D project of Collighter Co.,Ltd。

摘　　要：High-performance type-Ⅱsuperlattices ofⅢ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic devices.Improving the quality of epitaxial materials and clarifying the luminescent mechanism are of great significance for practic al applic ations.In this work,strain-balanced and high-quality In As/In_(x)Ga_(1-x)As_(y)Sb_(1-y)superlattices without lattice mismatch were achieved on InAs and GaSb substrates successfully.Superlattices grown on In As substrate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction(HRXRD)and atomic force microscopy(AFM)measurements'results.Moreover,the strain distribution phenomenon from geometric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more obvious.In addition,the optical properties of superlattices grown on different substrates are discussed systematically.Because of the difference in fluctuations of element composition and interface roughness of superlattices on different substrates,the superlattices grown on In As substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared emission.Finally,the thermal quenching of emission intensity indicates that the superlattices grown on the In As substrate have better recombination ability,which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.

关 键 词：Photoluminescence Alloy compositions fluctuations InAs(Sb)/In_(x)Ga_(1-x)As_(y)Sb_(1-y) Type-Ⅱsuperlattice Substrate 

分 类 号：TB34[一般工业技术—材料科学与工程] TN304[电子电信—物理电子学]