Enhancing thermoelectric performance of p-type SnTe through manipulating energy band structures and decreasing electronic thermal conductivity  

作　　者：Xin Qian Hao-Ran Guo Jia-Xin Lyu Bang-Fu Ding Xing-Yuan San Xiao Zhang Jiang-Long Wang Shu-Fang Wang 

机构地区：[1]Hebei Key Lab of Optic-Electronic Information and Materials,College of Physics Science and Technology,Hebei University,Baoding 071002,China [2]College of Electron and Information Engineering,Hebei University,Baoding 071002,China [3]Research Institute for Frontier Science,Beihang University,Beijing100191,China

出　　处：《Rare Metals》2024年第7期3232-3241,共10页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (Nos.52102234 and 51972094);the High-level Talents Research Initiation Project of Hebei University (No.521000981421);Hebei Province Introduced Overseas Student Funding Project (No.C20210313)。

摘　　要：SnTe has received considerable attention as an environmentally friendly alternative to the representative thermoelectric material of PbTe.However,excessive hole carrier concentration in SnTe results in an extremely low Seebeck coefficient and high thermal conductivity,which makes it exhibit relatively inferior thermoelectric properties.In this work,the thermoelectric performance of p-type SnTe is enhanced through regulating its energy band structures and reducing its electronic thermal conductivity by combining Bi doping with CdSe alloying.First,the carrier concentration of SnTe is successfully suppressed via Bi doping,which significantly decreases the electronic thermal conductivity.Then,the convergence and flattening of the valence bands by alloying CdSe effectively improves the effective mass of SnTe while restraining its carrier mobility.Finally,a maximum figure of merit(ZT) of~ 0.87 at 823 K and an average ZT of~ 0.51 at 300-823 K have been achieved in Sn_(0.96)Bi_(0.04)Te-5%CdSe.Our results indicate that decreasing the electronic thermal conductivity is an effective means of improving the performance of thermoelectric materials with a high carrier concentration.

关 键 词：Thermoelectric materials SnTe Energy band structure Electronic thermal conductivity ZT value 

分 类 号：TB34[一般工业技术—材料科学与工程]