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作 者:黄建锋 梁瑞虹[1] 周志勇[1] HUANG Jianfeng;LIANG Ruihong;ZHOU Zhiyong(Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)
机构地区:[1]中国科学院上海硅酸盐研究所,上海200050 [2]中国科学院大学材料科学与光电工程中心,北京100049
出 处:《无机材料学报》2024年第8期887-894,共8页Journal of Inorganic Materials
基 金:国家自然科学基金重点项目(51932010)。
摘 要:铌酸铋钙(CaBi_(2)Nb_(2)O_(9),CBN)是一种典型的铋层状结构压电材料,具有高居里温度(约943℃)、高稳定性等特点,是600℃以上高温压电振动传感器的重要候选功能元件,但其压电系数和高温电阻率较低,严重制约了CBN在高温压电振动传感器领域的实际应用。为了提高CBN压电陶瓷的高温稳定性,采用固相法制备了W/Cr共掺杂的CaBi_(2)Nb_(1.975)W_(0.025)O_(9)-x%Cr_(2)O_(3)(CBNW-xCr,0<x≤0.2)单相铋层状结构压电陶瓷,研究了W/Cr元素共掺杂对晶体结构和电学性能的影响。结果表明:W/Cr元素共掺杂使压电陶瓷晶体结构由正交晶系向四方晶系转变,晶体结构畸变程度增强,并且压电性能和绝缘性能显著提高。当x=0.1时,CBNW-0.1Cr压电陶瓷的居里温度为931℃,压电系数为15.6 pC/N,600℃时电阻率达到106Ω·cm量级,介电损耗仅为0.029,该体系在高温压电领域有重要的潜在应用前景。Calcium bismuth niobate(CaBi_(2)Nb_(2)O_(9))is a typical bismuth layered structure piezoelectric material with high Curie temperature(about 943)℃and high stability,which is an important candidate functional element for high temperature vibration sensors above 600.However,its low piezoelectric coefficient and high temperature resistivity℃seriously limit the signal acquisition of high-temperature piezoelectric vibration sensor.To improve the comprehensive performance,in this work,W/Cr co-doped CaBi_(2)Nb_(1.975)W_(0.025)O_(9)-x%Cr_(2)O_(3)(CBNW-xCr,0<x≤0.2)Aurivillius phase ceramics were prepared via conventional solid-state sintering route.The effects of W/Cr co-doping on the crystal structure and electrical properties of CBN piezoelectric ceramics were investigated.The results show that co-doping of W/Cr elements transforms crystal structure of the ceramics from orthorhombic to tetragonal crystal system,enhances distortion of the crystal structure,and significantly improves piezoelectric and insulating properties of the piezoelectric ceramics.When x=0.1,the Curie temperature is 931℃,the piezoelectric coefficient is 15.6 pC/N,the resistivity reaches the order of 106Ω·cm at 600℃,and the dielectric loss is only 0.029,which endows the system an important potential application in the field of high-temperature piezoelectricity.
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