悬浮液等离子喷涂制备Y_(2)O_(3)涂层及耐等离子刻蚀性  

Preparation of Y_(2)O_(3) Coating by Suspension Plasma Spraying and Its Resistance to Plasma Etching

作　　者：马文 申喆 刘琪 高元明 白玉 李荣星 MA Wen;SHEN Zhe;LIU Qi;GAO Yuanming;BAI Yu;LI Rongxing(Inner Mongolia Key Laboratory of Thin Film and Coatings,School of Materials Science and Engineering,Inner Mongolia University of Technology,Hohhot 010051,China;Inner Mongolia Engineering Research Center of Rare-earth New Materials and Functional Coatings,Hohhot 010051,China)

机构地区：[1]内蒙古工业大学材料科学与工程学院,内蒙古自治区薄膜与涂层重点实验室,呼和浩特010051 [2]内蒙古自治区稀土新材料及功能涂层工程研究中心,呼和浩特010051

出　　处：《无机材料学报》2024年第8期929-936,共8页Journal of Inorganic Materials

基　　金：内蒙古自然科学基金(2022MS05003,2021PT0008,JY20220041);内蒙古自治区高校创新科研团队项目(NMGIRT2319)。

摘　　要：随着高端芯片竞争的白热化,Y_(2)O_(3)涂层作为等离子体刻蚀工艺腔的重要组成部分,对其研究逐渐成为科研热点。利用悬浮液等离子喷涂(Suspension Plasma Spraying,SPS)在铝合金表面制备Y_(2)O_(3)涂层,研究了不同工艺参数对涂层的物相组成、力学性能、显微形貌和介电强度等的影响;在CF4/Ar/O_(2)氟等离子体环境中对Y_(2)O_(3)涂层分别刻蚀30、60、120 min后,分析了Y2O3涂层微观孔隙率对刻蚀速率的影响。最优工艺1(喷涂距离80 mm、送液速率35 mL/min、雾化气流速15 L/min、横向移枪速率700 mm/s、纵向移动步进1 mm/step)制备的Y2O3涂层的显微硬度为(3.78±0.36)GPa,孔隙率为(2.35±0.24)%,结合强度为(36.0±3.6)MPa,介电强度为(29.74±2.01)kV/mm。在CF4/Ar/O_(2)组成的混合等离子气体中,Y_(2)O_(3)涂层发生物理和化学反应,Ar+对涂层强烈冲击、轰击诱导,使表面化学键断裂;CF_(2)^(*)和F^(*)使Y_(2)O_(3)不断被刻蚀,生成的YF3附着在涂层表面;同时Ar+不断对涂层表面进行物理冲击,去除YF3层,少量残余在涂层表面的YF3被氧化形成了YOF,最终导致涂层刻蚀率低至(11.48±5.21)nm/min。高致密性、低孔隙率、高均匀性的Y_(2)O_(3)涂层可以有效提高零件的耐等离子刻蚀性能,对半导体工业具有重要意义。With the fierce competition of high-end chips,Y_(2)O_(3) coating is an important component of plasma etching cavity,corresponding research gradually becomes a research hotspot.Y_(2)O_(3) coating was prepared on aluminum alloy surface by suspension plasma spraying(SPS).The effects of different process parameters on the phase composition,mechanical properties,microstructure,and dielectric strength of the coating were studied.The effect of microscopic porosity of Y_(2)O_(3) coating on etching rate was analyzed after etching in CF4/Ar/O_(2) mixture for 30,60 and 120 min,respectively.The microhardness,the porosity,the bonding strength,and the dielectric strength of Y_(2)O_(3) coating prepared by the optimal process 1(spraying distance 80 mm,liquid feed rate 35 mL/min,atomizing gas flow rate 15 L/min,horizontal gun moving speed 700 mm/s,vertical moving step 1 mm/step)is(3.78±0.36)GPa,(2.35±0.24)%,(36.0±3.6)MPa,and(29.74±2.01)kV/mm,respectively.In the mixed plasma gas composed of CF_(4)/Ar/O_(2),the Y_(2)O_(3) coating undergoes physical and chemical reactions,while Ar+strongly shocks and bombards the coating to break the chemical bond on the surface.CF_(2)^(*)and F^(*)make Y_(2)O_(3) continuously etched to form YF_(3) attaching to the coating surface.At the same time,the physical impact of Ar+constantly acts on the surface of the coating,removing the YF_(3) layer,and a small amount of residual YF_(3) on the surface of the coating is oxidized and finally forms YOF,resulting in a coating etching rate as low as(11.48±5.21)nm/min.Y_(2)O_(3) coating with high density,low porosity and high uniformity can effectively improve the resistance of parts to plasma etching,which is of great significance in semiconductor industry.

关 键 词：悬浮液等离子喷涂 Y_(2)O_(3)涂层 孔隙率 耐等离子刻蚀性 

分 类 号：TQ174[化学工程—陶瓷工业]