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作 者:刘熠闻 李腾[2] 卓浩 徐立强 陈峰[2] 张海波[3,4] 王俊亚 LIU Yiwen;LI Teng;ZHUO Hao;XU Liqiang;CHEN Feng;ZHANG Haibo;WANG Junya(Institutes of Physical Science and Information Technology,Anhui University,Hefei 230601;Anhui Provincial Key Laboratory of Extreme Conditions,High Magnetic Field Laboratory,Chinese Academy of Sciences,Hefei 230088;State Key Laboratory of Material Processing and Die&Mould Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074;Optics Valley Laboratory,Wuhan 430074)
机构地区:[1]安徽大学物质科学与信息技术研究院,合肥230601 [2]中国科学院强磁场科学中心安徽省极端条件重点实验室,合肥230088 [3]华中科技大学材料科学与工程学院,材料成型与模具技术国家重点实验室,武汉430074 [4]湖北光谷实验室,武汉430074
出 处:《低温物理学报》2024年第2期89-95,共7页Low Temperature Physical Letters
基 金:国家自然科学基金(批准号:12374095)资助的课题。
摘 要:铌酸钾钠(K_(0.5)Na_(0.5)NbO_(3),KNN)基铁电材料被认为是最有可能取代铅基铁电材料的无铅体系之一,但是较差的铁电性和温度稳定性限制了其应用.本文采用脉冲激光沉积技术,在SrTiO_(3)(100)衬底上,以La_(0.07)Ba_(0.93)SnO_(3)(LBSO)为底电极,成功外延生长了Mn掺杂的K_(0.5)Na_(0.5)NbO_(3)无铅铁电薄膜(K_(0.5)Na_(0.5)NbO_(3)-1wt.%MnO_(2),KNN-M),并系统研究了薄膜的结构,形貌,性能及相变行为.研究结果表明,KNN薄膜高质量外延,具有良好的铁电性能,电滞回线为饱和的矩形,在800 kV/cm的外加电场下,剩余极化值2Pr达到48.1μC/cm^(2),矫顽电场2Ec达到214 kV/cm;室温下具有较高介电常数(717.56)和较低介电损耗(0.146);此外,薄膜还有着较高的T_(c)值(~405℃).以上结果说明,K_(0.5)Na_(0.5)NbO_(3)-1wt.%MnO2薄膜作为取代铅基铁电薄膜的候选材料具有很大潜力.KNN-based(K_(0.5)Na_(0.5)NbO_(3))ferroelectric materials are considered one of the most promising lead-free systems to replace lead-based ferroelectric materials.However,their poor ferroelectricity and temperature stability limit their application.This article utilizes the pulsed laser deposition method with SrTiO_(3)(100)as the substrate and La_(0.07)Ba_(0.93)SnO_(3)(LBSO)as the bottom electrode to successfully epitaxially grow K_(0.5)Na_(0.5)NbO_(3)lead-freeferroelectricthinfilms with1wt.%MnO_(2) addition(K_(0.5)Na_(0.5)NbO_(3)-1wt.%MnO_(2),KNN-M).The phase structure,microstructure,electrical properties,and phase transition behavior of the thin films are systematically studied.The research results indicate that KNN thin films have high crystalline quality and a rectangular saturated hysteresis loop with 2Pr=48.1 PC/cm^(2),2Ec=214 kV/cm under an applied electric field of 800 kV/cm.At room temperature,they exhibit a high dielectric constant(717.56)and a low dielectric loss(0.146).Additionally,the film also have a high T_(c) value(~405℃).These results imply that K_(0.5)Na_(0.5)NbO_(3)-1wt.%MnO_(2) thin films can be used as a candidate material to replace lead-based ferroelectric thin films.
分 类 号:TB383.2[一般工业技术—材料科学与工程]
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