New‑Generation Ferroelectric AlScN Materials  

作　　者：Yalong Zhang Qiuxiang Zhu Bobo Tian Chungang Duan 

机构地区：[1]Key Laboratory of Polar Materials and Devices,Ministry of Education,Shanghai Center of Brain‑Inspired Intelligent Materials and Devices,Department of Electronics,East China Normal University,Shanghai 200241,People’s Republic of China [2]Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,Shanxi,People’s Republic of China

出　　处：《Nano-Micro Letters》2024年第11期88-118,共31页纳微快报（英文版）

基　　金：fundings of National Natural Science Foundation of China(No.T2222025,62174053 and 61804055);National Key Research and Development program of China(No.2021YFA1200700);Shanghai Science and Technology Innovation Action Plan(No.21JC1402000 and 21520714100);the Fundamental Research Funds for the Central Universities.

摘　　要：Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner.However,complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices.The emerging ferroelectricity of wurtzite structure nitride offers opportunities to circumvent the dilemma.This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films.The performance optimization of AlScN films grown by different techniques is summarized and their applications for memories and emerging in-memory computing are illustrated.Finally,the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.

关 键 词：AlScN FERROELECTRICS Nonvolatile memory In-memory computing 

分 类 号：TB383.2[一般工业技术—材料科学与工程]