TiO_(2)掺杂对ZnO压敏电阻性能的影响  

Effect of TiO_(2)Doping on Properties of ZnO Varistor

作　　者：吴育聪 任鑫 孙岩 杨莉禹 宁宇 姚政 WU Yucong;REN Xin;SUN Yan;YANG Liyu;NING Yu;YAO Zheng(Nano-Science and Technology Research Center,College of Sciences,Shanghai University,shanghai 200444,China)

机构地区：[1]上海大学理学院纳米科学与技术研究中心,上海2000444

出　　处：《电瓷避雷器》2024年第4期64-70,共7页Insulators and Surge Arresters

摘　　要：通过材料配方中掺杂不同的TiO_(2)探究其对ZnO压敏电阻综合电气性能及退化行为的影响。实验对成品的晶相组成、微观结构、综合电学性能等进行了测试与表征。研究发现当掺杂量为0.4%(摩尔分数,下同)时的样品E4体现了整体较优的表现,其电位梯度由E0的180.2 V/mm降低至147.3 V/mm,α=83.8,IL=0.38μA。随着20次20 kA的电流冲击,电位梯度均呈下降的趋势,其中掺杂了TiO_(2)的样品中E4表现最佳,%ΔE+1mA和%ΔE-1mA分别为-5.64%和-4.71%,老化系数Kct值为0.75,功耗降低程度较大,表现出良好的电学性能,更适合在电路中长期工作。The effect of TiO_(2)doping on the comprehensive electrical properties and degradation behavior of ZnO varistor were investigated.The crystal phase composition,microstructure and comprehensive electrical properties of the product were tested and characterized.It is found that the sample E4 with 0.4%(mol fraction,the same below)doping exhibits better overall performance,and its potential gradient decreases from 180.2 V/mm to 147.3 V/mm,α=83.8,I L=0.38 mA.With 20 pulses of 20 kA,the potential gradient decreased,and the samples doped with TiO_(2)showed the best performance in E4.-5.64%for%ΔE+1mA and-4.71%for%ΔE-1mA,the aging coefficient Kct value is 0.75,the power consumption is greatly reduced,showing good electrical performance,and the invention is more suitable for long-term operation in circuits.

关 键 词：ZNO压敏电阻 TiO_(2) 电学性能 

分 类 号：TM54[电气工程—电器]