Effect of substrate temperature and oxygen plasma treatment on the properties of magnetron-sputtered CdS for solar cell applications  

衬底加热温度以及氧等离子体处理对磁控溅射CdS性质的影响以及其在太阳能电池中的应用

作　　者：Runxuan Zang Haolin Wang Xiaoqi Peng Ke Li Yuehao Gu Yizhe Dong Zhihao Yan Zhiyuan Cai Huihui Gao Shuwei Sheng Rongfeng Tang Tao Chen 臧润宣;王颢霖;彭小琪;李科;顾月皓;董熠哲;严志昊;蔡志远;高徽徽;盛淑伟;唐荣风;陈涛(中国科学技术大学化学与材料科学学院材料科学与工程系,安徽合肥230026)

机构地区：[1]Department of Materials Science and Engineering,School of Chemistry and Materials Science,University of Science and Technology of China,Hefei 230026,China

出　　处：《中国科学技术大学学报》2024年第6期22-33,I0010,共13页JUSTC

基　　金：supported by the National Natural Science Foundation of China(22275180);the National Key Research and Development Program of China(2019YFA0405600);the Collaborative Innovation Program of Hefei Science Center,CAS,and the University Synergy Innovation Program of Anhui Province(GXXT-2023-031).

摘　　要：Cadmium sulfide(CdS)is an n-type semiconductor with excellent electrical conductivity that is widely used as an electron transport material(ETM)in solar cells.At present,numerous methods for preparing CdS thin films have emerged,among which magnetron sputtering(MS)is one of the most commonly used vacuum techniques.For this type of technique,the substrate temperature is one of the key deposition parameters that affects the interfacial properties between the target film and substrate,determining the specific growth habits of the films.Herein,the effect of substrate temperature on the microstructure and electrical properties of magnetron-sputtered CdS(MS-CdS)films was studied and applied for the first time in hydrothermally deposited antimony selenosulfide(Sb_(2)(S,Se)_(3))solar cells.Adjusting the substrate temperature not only results in the design of the flat and dense film with enhanced crystallinity but also leads to the formation of an energy level arrangement with a Sb_(2)(S,Se)_(3)layer that is more favorable for electron transfer.In addition,we developed an oxygen plasma treatment for CdS,reducing the parasitic absorption of the device and resulting in an increase in the short-circuit current density of the solar cell.This study demonstrates the feasibility of MS-CdS in the fabrication of hydrothermal Sb_(2)(S,Se)_(3)solar cells and provides interface optimization strategies to improve device performance.硫化镉(CdS)是一种具有优异导电性的n型半导体,广泛用作太阳能电池中的电子传输材料。目前,已经出现了许多制备CdS薄膜的方法,其中磁控溅射(MS)是最常用的真空技术之一。对于这类技术,衬底温度是影响生长薄膜和衬底之间的界面性质的关键沉积参数之一,决定了膜的特定生长规律。本文研究了衬底温度对磁控溅射CdS(MS-CdS)薄膜微观结构和电学性能的影响,并首次将其应用于水热沉积硒化锑(Sb_(2)(S,Se)_(3))太阳能电池。调节衬底温度不仅设计出具有增强结晶度的平坦致密的膜,而且与Sb_(2)(S,Se)_(3)层形成更有利于电子转移的能级排列。此外,我们开发了一种用于CdS的氧等离子体处理,减少了器件的寄生吸收,并增加了太阳能电池的短路电流密度。本研究证明了磁控溅射CdS在制备水热Sb_(2)(S,Se)_(3)太阳能电池中的可行性,并为提高器件性能提供了界面优化策略。

关 键 词：magnetron sputtering CDS substrate heating plasma treatment Sb_(2)(S Se)_(3) thin film solar cell 

分 类 号：TB383[一般工业技术—材料科学与工程] TM914.4[电气工程—电力电子与电力传动]