h-BN中子探测器制备及中子响应  

Preparation and Neutron Response of h-BN Neutron Detector

作　　者：焦伟勇 黄河[1] 刘吉珍 朱志甫[1] 王旭[2] 王玮[2] 邹继军[1] 龙炳旭 Jiao Weiyong;Huang He;Liu Jizhen;Zhu Zhifu;Wang Xu;Wang Wei;Zou Jijun;Long Bingxu(School of Mechanical and Electronic Engineering,East China University of Technology,Nanchang 330013,China;China Nuclear Power Research and Design Institute,Chengdu 610005,China)

机构地区：[1]东华理工大学机械与电子工程学院,南昌330013 [2]中国核动力研究设计院,成都610005

出　　处：《机电工程技术》2024年第8期28-31,46,共5页Mechanical & Electrical Engineering Technology

基　　金：国家自然科学基金面上基金资助项目(61964001,12275049,62211530107);河南省科技攻关项目(242102520013);江西省重点研发计划资助项目(20212BBG73012);核技术应用教育部工程研究中心开放基金资助(HJS2021-4)。

摘　　要：h-BN具有高的反应截面和高效率直接探测中子的优势,在中子探测技术领域具有潜在的应用场景。分析了三步脱氢法生长h-BN的低气压化学沉积机理,对于生长高质量的h-BN晶体,氨硼烷前驱体的升华温度是一个重要的参数。通过优化氨硼烷前驱体的升华温度,利用LPCVD外延生长技术在蓝宝石衬底上外延生长了高质量的h-BN。XRD表征技术表明,优化氨硼烷前驱体的升华温度能够显著改善h-BN晶体质量。利用半导体制备工艺在h-BN上完成了中子探测器的制备,在中子源照射下,在不同的氨硼烷升华温度下,获得了单个中子的电信号。中子响应测试结果表明,当设定温度分别为165℃和170℃时,获得了2.088 V和2.16 V的电压信号,电荷收集效率分别达到了87%和90%,实验中所测量的电压值与理论预期值呈现出良好的一致性。本实验结果对未来晶圆级和高质量h-BN晶体生长提供了实验数据,并为h-BN中子探测器大规模商业化应用提供关键的技术支撑。h-BN exhibits significant potential in neutron detection technology due to its high reaction cross-section and high efficiency in directly detecting neutrons.The low-pressure chemical vapor deposition mechanism of h-BN grown by the three-step dehydrogenation method is analyzed.In order to achieve high-quality h-BN crystals,the sublimation temperature of ammonia borane precursor is identified as a critical parameter.Through the optimization of the sublimation temperature of the ammonia borane precursor,high-quality h-BN is successfully grown on a sapphire substrate using the LPCVD epitaxial growth technique.The fabrication of a neutron detector is accomplished on h-BN through semiconductor fabrication processes,and single neutron electrical signals are obtained under neutron source irradiation at different sublimation temperatures of ammonia borane.The neutron response test results demonstrate that,when the set temperature is 165℃and 170℃respectively,voltage signals at 2.088 V and 2.16 V are obtained,and the charge collection efficiency reaches 87%and 90%respectively.The measured voltage value in the experiment shows good agreement with the theoretical expected value.This experimental study provides empirical data for future wafer-level and high-quality h-BN crystal growth,and crucial technological support for the large-scale commercialization of h-BN neutron detectors.

关 键 词：H-BN 中子探测器 氨硼烷 升华温度 

分 类 号：TL816.3[核科学技术—核技术及应用]