氧化石墨烯薄膜还原程度对测温与电热性能的影响  

Effect ofreduction degree of graphene oxide films ontemperature sensing and electro heating properties

作　　者：刘娜 曹成成 陶冶[2] 李会东 杨莉萍[2,3] 陈泽中[1] LIU Na;CAO Chengcheng;TAO Ye;LI Huidong;YANG Liping;CHEN Zezhong(School of Materials and Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;Inorganic Materials Analysis and Testing Center,Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of High-Performance Ceramics and Superfine Microstructure,Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,China)

机构地区：[1]上海理工大学材料与化学学院,上海200093 [2]中国科学院上海硅酸盐研究所无机材料分析与测试中心,上海200050 [3]中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室,上海200050

出　　处：《功能材料》2024年第8期8178-8184,共7页Journal of Functional Materials

基　　金：国家自然科学基金(51606209);中国载人空间站工程(TGTHYY0401);中国载人航天科技项目(YYMT1201-EXP02)。

摘　　要：由于质量轻、韧性好、价格低廉且成型工艺简单等诸多优点,还原氧化石墨烯(reduced graphene oxide,rGO)薄膜在温度传感和电加热等领域颇受关注。分析了经不同温度热还原的rGO薄膜在微观结构、键合种类、力学及电学性能上的差异,以探究还原程度对rGO薄膜测温与加热能力的影响。结果表明,氧化石墨烯(graphene oxide,GO)薄膜内的C-O、C=O等含氧官能团在200℃还原后明显减少,碳原子的主要键合类型由C-C键变为C=C键。当还原温度升至600℃时,rGO薄膜内仍保留了部分含氧羟基官能团,C/O为7.18,而经800℃还原的rGO薄膜成分已趋近石墨烯。随着还原程度的增大,rGO薄膜的电阻率呈明显下降趋势,但氧原子的析出破坏了rGO薄膜的层间致密结构,使拉伸强度逐渐降低。当还原温度达到600℃时,电阻-温度曲线表现出优异的线性关系,室温电阻温度系数(temperature coefficient of resistance,TCR)为-1.60×10^(-3)/℃。在24 V直流驱动电压下,经600和800℃热还原的rGO薄膜可分别加热至242和367℃,但由于层间结构的松散和开裂,经800℃热还原的rGO薄膜的自发热升温曲线波动明显。因此,对于要求加热和测温双功能的应用场景,经600℃还原的rGO薄膜表现出更好的综合性能。Due to outstanding advantages such as lightweight,good toughness,low cost and simple forming process,reduced graphene oxide(rGO)films have attracted considerable attention in temperature sensing and electro heating fields.In this study,the difference in the microstructure,bond types,mechanical and electrical properties of rGO films reduced at different temperatures are analysed to explore the influence of reduction degree on temperature sensing and heating performance of rGO films.The results indicate that oxygen-containing functional groups including C-O and C=O in graphene oxide(GO)films decrease dramatically at 200℃,and the main bonding type of carbon atoms transfers from C-C to C=C.When the reduction temperature rises to 600℃,rGO films still retain some oxygen-containing functional groups with a C/O ratio of 7.18,while the composition of rGO films reduced at 800℃approaches to graphene.With the increase of reduction degree,electrical resistivity of rGO films shows a significant decrease.However,the outgassing of oxygen atoms disrupts the interlayer dense structure,leading to gradual reduction in tensile strength.At the reduction temperature of 600℃,the resistance-temperature curve exhibits excellent linear relationship with a temperature coefficient of resistance(TCR)value of-1.60×10^(-3)/℃at room temperature.Under 24 V DC driving voltage,rGO films reduced at 600℃and 800℃reach 242℃and 367℃,respectively.However,due to the loose and cracked interlayer structure,there happens a noticeable fluctuation in the heating temperature curve of rGO films reduced at 800℃.Therefore,rGO films reduced at 600℃are proven to be more suitable for heating and temperature sensing.

关 键 词：还原氧化石墨烯 热还原 电阻温度系数 电加热性能 

分 类 号：TB383.1[一般工业技术—材料科学与工程]