脉冲激光沉积法制备Ga掺杂ZnO薄膜结构、光学和电学性能研究  

Structural,Optical and Electrical Properties of Ga-doped ZnO Films Prepared by Pulsed Laser Deposition

作　　者：周同 杨晓漫 刘亲壮[1] ZHOU Tong;YANG Xiaoman;LIU Qinzhuang(School of Physics and Electronic Information,Huaibei Normal University,235000,Huaibei,Anhui,China)

机构地区：[1]淮北师范大学物理与电子信息学院,安徽淮北235000

出　　处：《淮北师范大学学报（自然科学版）》2024年第3期23-29,共7页Journal of Huaibei Normal University：Natural Sciences

基　　金：国家自然科学基金项目(11974127);安徽省自然科学基金项目(2008085MA19);淮北师范大学研究生创新基金项目(CX2023039)。

摘　　要：为探究掺杂含量及薄膜厚度对Ga_(x)Zn_(1-x)O薄膜各性能的影响,利用脉冲激光沉积法在MgO衬底上制备一系列Ga_(x)Zn_(1-x)O薄膜。X射线衍射结果表明,所有薄膜均沿z轴择优生长,结晶质量和透光率随掺杂含量的增加而降低。Ga掺杂含量为3%的薄膜获得最佳电学性能。薄膜结晶质量随厚度增加而提高,在250 nm获得最低电阻率1.34×10^(-4)Ω·cm和最高迁移率26.48 cm^(2)/Vs。3%组分不同厚度的薄膜可见光范围内光透过率均高于80%。Ga_(x)Zn_(1-x)O薄膜是替代传统铟锡氧化物的良好候选材料。In order to investigate the effects of doping content and film thickness on the properties of Ga_(x)Zn_(1-x)O thin films,a series of Ga_(x)Zn_(1-x)O thin films were prepared by pulsed laser deposition on MgO substrates.The X-ray diffraction results showed that all the films grew along the z-axis optimally,and the crystalline.The quality and transmittance decreased with the increasing of the doping content.The best electrical properties were obtained for the films with 3% Ga doping content.The crystalline quality of the films increased with the increase of thickness,and the lowest resistivity of 1.34 × 10^(-4)Ω·cm corresponding to the highest mobility of 26.48 cm^(2)/Vs were obtained at 250 nm.The optical transmittance in the visible range of the films with different thicknesses of the 3% component was higher than 80%.All the results indicate that Ga_(x)Zn_(1-x)O films are good candidates for replacing conventional indium tin oxides.

关 键 词：脉冲激光沉积 Ga_(x)Zn_(1-x)O薄膜 电学性能 X射线衍射 

分 类 号：TB34[一般工业技术—材料科学与工程]