氧分压对a-Ga_(2)O_(3)基日盲紫外光电探测器性能的影响研究  

Effect of oxygen partial pressure on amorphous Ga2O3-based solar-blind ultraviolet photodetectors

作　　者：杨瑞[1] 杨斯铄 钱凌轩[1,2] Yang Rui;Yang Sishuo;Qian Lingxuan(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu,Sichuan 611731,China;Chongqing Institute of Microelectronics Industry Technology,University of Electronic Science and Technology of China,Chongqing 401332,China)

机构地区：[1]电子科技大学电子薄膜与集成器件全国重点实验室,四川成都611731 [2]电子科技大学重庆微电子产业技术研究院,重庆401332

出　　处：《光电工程》2024年第6期96-104,共9页Opto-Electronic Engineering

基　　金：国家自然科学基金资助项目(62174025)。

摘　　要：非晶氧化镓(a-Ga_(2)O_(3))基日盲紫外光电探测器的性能与a-Ga_(2)O_(3)薄膜内的氧空位有关,氧空位的浓度制约着探测器的响应度和响应速度。为了在探测器的响应度和响应速度之间达到平衡,本文通过微调射频磁控溅射过程中的氧分压,调控薄膜内的氧空位浓度,并在此基础上成功制备金属-半导体-金属(metal-semiconductor-metal,MSM)型日盲紫外探测器。研究结果显示,通过掺入氧气能减少薄膜内的氧空位,改善薄膜的致密度。适当条件的氧分压可以使探测器在维持良好响应度的前提下,同时拥有较快的响应速度,在两种互相制约的特性上达到了平衡。特别地,在3%氧分压条件下制备得到的日盲探测器在254 nm、80μW/cm^(2)的紫外光照射下具有2.6 A/W的响应度以及2.2 s/0.96 s的快速响应速度。Oxygen vacancies in the a-Ga_(2)O_(3)film play a crucial role in the performance of a-Ga_(2)O_(3)-based solar-blind photodetectors(SBPDs).The concentration of oxygen vacancies is a“double-edged sword”,increasing the responsivity of the SBPDs but deteriorating the response speed.In order to achieve a balance between these two key parameters,we adjusted the oxygen vacancy concentration in the film by delicately tuning the oxygen partial pressure during the sputtering process.The metal-semiconductor-metal(MSM)SBPDs were prepared accordingly.The results demonstrate that incorporating moderate oxygen can reduce the oxygen vacancies in the film and improve the density of the film.Under appropriate conditions,the oxygen partial pressure enables the photodetector to maintain good responsivity while having a fast response speed.At an oxygen partial pressure of 3%,the device has a high responsivity of 2.62 A/W under 254-nm DUV irradiation and a fast response speed of 2.2 s/0.96 s.

关 键 词：非晶氧化镓 日盲紫外光电探测器 响应度 射频磁控溅射 

分 类 号：TN23[电子电信—物理电子学]