机构地区:[1]School of Mathematics and Science,Joint Laboratory for Extreme Conditions Matter Properties,State Key Laboratory of Environment-Friendly Energy Materials,Tianfu Institute of Research and Innovation,Southwest University of Science and Technology,Mianyang 621010,China [2]Department of Oncology,Sichuan Science City Hospital,Mianyang,Sichuan Province,621000,China [3]School of Chemistry and Chemical Engineering,Jishou University,Jishou 416000,China [4]School of Physics and Optoelectronic Engineering,Yangtze University,Jingzhou,Hubei 434023,China [5]School of Microelectronics and Control Engineering,Changzhou University,Changzhou 213164,China [6]School of Physics and Electronic Information Engineering,Hubei Engineering University,Xiaogan 432000,China [7]Institute of Physics,Bahauddin Zakariya University,Multan 66000,Pakistan
出 处:《Communications in Theoretical Physics》2024年第7期123-133,共11页理论物理通讯(英文版)
基 金:support from the National Natural Science Foundation of China(Nos.51606158,11604311,and 12074151);Sichuan Science and Technology Program(No.2021JDRC0022);Natural Science Foundation of Fujian Province(No.2021J05202);Research Project of Fashu Foundation(No.MFK23006);Open Fund of the Key Laboratory of Metallurgical Equipment and Control Technology of Ministry of Education in Wuhan University of Science and Technology(No.MECOF2022B01);the project supported by Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology(No.DH202321).
摘 要:The field of terahertz devices is important in terahertz technology.However,most of the current devices have limited functionality and poor performance.To improve device performance and achieve multifunctionality,we designed a terahertz device based on a combination of VO_(2)and metamaterials.This device can be tuned using the phase-transition characteristics of VO_(2),which is included in the triple-layer structure of the device,along with SiO_(2)and Au.The terahertz device exhibits various advantageous features,including broadband coverage,high absorption capability,dynamic tunability,simple structural design,polarization insensitivity,and incidentangle insensitivity.The simulation results showed that by controlling the temperature,the terahertz device achieved a thermal modulation range of spectral absorption from 0 to 0.99.At 313 K,the device exhibited complete reflection of terahertz waves.As the temperature increased,the absorption rate also increased.When the temperature reached 353 K,the device absorption rate exceeded 97.7%in the range of 5-8.55 THz.This study used the effective medium theory to elucidate the correlation between conductivity and temperature during the phase transition of VO_(2).Simultaneously,the variation in device performance was further elucidated by analyzing and depicting the intensity distribution of the electric field on the device surface at different temperatures.Furthermore,the impact of various structural parameters on device performance was examined,offering valuable insights and suggestions for selecting suitable parameter values in real-world applications.These characteristics render the device highly promising for applications in stealth technology,energy harvesting,modulation,and other related fields,thus showcasing its significant potential.
关 键 词:terahertz perfect absorption complete reflection temperature regulation ULTRAWIDEBAND smart device
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