双梯形多模干涉耦合器用于提高半导体激光器电光效率  

Double Trapezoidal Multimode Interference Coupler Used to Improve Electro⁃Optical Efficiency of Semiconductor Laser

作　　者：宫梓傲 虞顺超 邹永刚 徐英添 范杰 Gong Ziao;Yu Shunchao;Zou Yonggang;Xu Yingtian;Fan Jie(State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun 130022,Jilin,China;Chongqing Research Institute Changchun University of Science and Technology,Chongqing 401122,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022 [2]长春理工大学重庆研究院,重庆401122

出　　处：《中国激光》2024年第14期100-108,共9页Chinese Journal of Lasers

基　　金：吉林省科技发展计划项目(20210201030GX);吉林省科技厅中青年科技创新创业卓越人才(团队)项目(20220508138RC);重庆市自然科学基金面上项目(CSTB2022NSCQ-MSX0401,CSTB2022NSCQ-MSX0889)。

摘　　要：设计并制作了一种含有双梯形多模干涉(DT-MMI)耦合器结构的有源MMI半导体激光器(DTM-LD)。基于双梯形MMI多模波导的自映像分布重构效应,该激光器在保持与传统矩形有源MMI激光器(MMI-LD)相同有源区面积的同时,具有更短的器件腔长,有利于器件电光转换效率的提升。实验制得了双梯形底宽为15μm、腰宽为30μm的DTM-LD器件。在保持有源面积约为3.33×10^(4)μm^(2)的情况下,该激光器件的腔长相比于MMI-LD减小了4.2%。在注入电流为1 A的情况下,DTM-LD的电光转换效率由14.5%提升至16.3%,相对提升了12.4百分点,同时其最高输出功率由355 mW小幅提升至360 mW。当MMI多模波导的宽度减小0.5μm时,相比于MMI-LD,DTM-LD的输出功率损耗由51 mW减小至40 mW,降低了21.6%,这表明DTM-LD具有较低的制造误差敏感性。Objective An active multimode interference (MMI) semiconductor laser (DTM-LD) with a double-trapezoidal multimode interference (DT-MMI) coupler structure is designed and fabricated.Based on the self-mapping distribution reconstruction effect of a double-trapezoidal MMI multimode waveguide,the laser has a shorter device cavity length while maintaining the same active area as the traditional rectangular active MMI laser (MMI-LD),which is beneficial for improving the electro-optical conversion efficiency of the device.A DTM-LD device with a double trapezoidal base width of 15μm and a waist width of 30μm is fabricated experimentally.When the active area is approximately 3.33×10^(4)μm^(2),the cavity length of the laser device decreases by 4.2% compared to that of the MMI-LD.When the injection current is 1 A,the electro-optic conversion efficiency of DTM-LD increases from 14.5% to 16.3%,a relative increase of 12.4%,and its maximum output power slightly increases from 355 to 360 mW.When the width of the MMI multimode waveguide is reduced by 0.5μm,the output power loss of DTM-LD reduces by 21.6% from 51 to 40 mW compared with that of the MMI-LD device,indicating that DTM-LD has lower sensitivity to manufacturing error.Methods A double-trapezoidal multimode interference coupler structure was developed,and it was found that the length difference between the rectangular MMI and DT-MMI could be increased by increasing the difference between W_(bot) and W_(mid) while maintaining the area of the multimode waveguide unchanged,as shown in Fig.3(a).However,the insertion loss of the device also increased significantly when the maximum light intensity was the output,as shown in Fig.3(b).The sensitivity of the output light intensity of the DT-MMI structure to manufacturing errors was less than that of the rectangular MMI structure when parameters W_(bot )and W_(mid )were changed owing to process errors.This provided a basis for parameter selection of the device.Therefore,the DT-MMI region was designed with a base width W_(bot)

关 键 词：半导体激光器 MMI耦合器 双梯形 电光转换效率 

分 类 号：TN248.4[电子电信—物理电子学]