基于光热反射的高功率半导体激光器输出腔面温度研究方法  

Output Facet Temperature of High-Power Semiconductor Lasers Using Optical-Thermal Reflection Method

作　　者：徐梓棒 苗新莲 刘育衔 兰宇 赵宇亮 张翔 杨国文[5] 袁孝 Xu Zibang;Miao Xinlian;Liu Yuxian;Lan Yu;Zhao Yuliang;Zhang Xiang;Yang Guowen;Yuan Xiao(School of Optoelectronic Science and Engineering,Soochow University,Suzhou 215006,Jiangsu,China;Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province,Suzhou 215006,Jiangsu,China;Key Lab of Modern Optical Technologies of Education Ministry of China,Suzhou 215006,Jiangsu,China;State Key Laboratory of Transient Optics and Photonics,Xi'an Institute of Optics and Precision Mechanics,Chinese Academy of Sciences,Xi'an 710119,Shaanxi,China;Dogain Optoelectronic Technology(Suzhou)Co.,Ltd.,Suzhou 215000,Jiangsu,China)

机构地区：[1]苏州大学光电科学与工程学院,江苏苏州215006 [2]江苏省先进光学制造技术重点实验室,江苏苏州215006 [3]教育部现代光学技术重点实验室,江苏苏州215006 [4]中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,陕西西安710119 [5]度亘核芯光电技术(苏州)有限公司,江苏苏州215000

出　　处：《中国激光》2024年第13期15-23,共9页Chinese Journal of Lasers

摘　　要：半导体激光器输出腔面温度过高是导致腔面失效的关键因素,该温度直接决定了激光器的最高输出功率和可靠性。由于半导体激光器输出腔面尺寸在微米量级,故温度测量系统需要具有亚微米量级的空间分辨率,以获取输出腔面处的温度分布信息。采用光热反射成像技术建立了空间分辨率优于0.5μm的温度测量系统,开展了半导体激光器输出腔面的测温研究。结果表明,半导体激光器输出腔面温度沿慢轴方向的分布极不均匀;在10 A驱动电流下,条宽为100μm的975 nm高功率半导体激光器输出腔面外延层不同位置处的最大温差超过7℃,且输出腔面处量子阱层的最高温度(55℃)比结温(44.9℃)高10.1℃。研究结果有助于精确测量半导体激光器输出腔面的温度分布,对高功率半导体激光器的设计、测试、光学灾变损伤和失效分析等具有重要意义。Objective Semiconductor lasers have been widely used in industrial,medical,and other fields owing to their high electro-optical conversion efficiency,wide spectrum,and high power-to-volume ratio characteristics.However,as the application field expanded,higher power and reliability requirements have been stated.When manufacturing a high-power semiconductor laser,catastrophic optical mirror damage (COMD) is a key factor limiting the output power and reliability characteristics.COMD occurs due to a local temperature rise at the facet,which exceeds the material damage threshold,and it denotes the irreversible physical damage inflicted on the facet.Note that the occurrence of COMD is closely related to the output facet temperature;thus,accurately measuring the temperature and plotting its distribution are crucial for assessing the failure characteristics of high-power semiconductor lasers.Methods This study is based on the optical thermal reflection method used to construct a semiconductor laser output surface temperature measurement system.Accordingly,the distribution characteristics of the output surface temperature are studied.First,the thermal reflection coefficient of the output facet material used in the semiconductor laser is measured,based on which the measurement system is calibrated.Second,the lock-in method is used to improve the signal-to-noise ratio of the measurement system by increasing the number of image acquisitions.Finally,the output facet temperatures are measured under different operating currents,and the temperature information along the fast and slow axes is extracted and analyzed.Results and Discussions The thermal reflection coefficient of the active region is 5.06×10^(-4)[Fig.3(a)],and that of the substrate is 6.03×10^(-4)[Fig.3(b)].After 1000 iterations,the amplitude fluctuation of the thermal reflection signal tends to a smooth curve,causing a temperature fluctuation of less than 0.4℃(Fig.6).The output facet temperature under the 1?10 A current is measured;the output facet temperature o

关 键 词：激光器 半导体激光器 光热反射 腔面温度 灾变性光学镜面损伤 

分 类 号：TN365[电子电信—物理电子学]