高功率衬底转移VCSEL阵列失效分析与早期筛选  

Failure Analysis and Early Screening of High Power Substrate-Transferred VCSEL Arrays

作　　者：周泉材 李阳 袁崇献 范鑫烨[1] 李川川 韦欣[2,3] Zhou Quancai;Li Yang;Yuan Chongxian;Fan Xinye;Li Chuanchuan;Wei Xin(School of Physical Science and Information Engineering,Liaocheng University,Liaocheng 252059,Shandong,China;NanoOptoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and OptoElectronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China;School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]聊城大学物理科学与信息工程学院,山东聊城252059 [2]中国科学院半导体研究所纳米光电子实验室,北京100083 [3]中国科学院大学材料科学与光电技术学院,北京100049 [4]中国科学院大学电子电气与通信工程学院,北京100049

出　　处：《中国激光》2024年第13期34-43,共10页Chinese Journal of Lasers

摘　　要：高功率垂直腔面发射激光器(VCSEL)阵列在激光医疗和激光传感等领域有着广泛应用,不同的应用场景对高功率VCSEL阵列的可靠性、成本、功率密度等也有着相应的要求。本文针对长脉冲应用场景的5 mm×5 mm大尺寸高功率808 nm VCSEL阵列器件,开展了可靠性研究,并探讨了衬底转移、封装等因素对器件带来的影响。可靠性实验在电流为50 A、脉宽为30 ms、频率为10 Hz的注入水平下进行,利用共聚焦显微镜、X射线透视仪、电荷耦合器件(CCD)显微镜等进行数据收集。实验结果表明,对于衬底转移的大尺寸高功率808 nm器件,表面不规律凸起、焊接空洞、暗点数量等均会导致器件早期失效,尤其是20μm以上的不规律凸起高度、15%以上的不规律凸起面积、单个空洞比大于1.5%的焊接空洞和1%以上的暗点数量会直接带来致命损伤。本文的可靠性失效分析结果为高功率VCSEL阵列在工业应用中的早期失效筛选提供了一种简便可靠的方法。Objective Vertical-cavity surface-emitting lasers(VCSELs) are characterized by low divergence angle, circular output beam, low threshold current, low temperature dependence(approximately 0.07 nm/K), high efficiency, and an extended lifespan. Because the distributed Bragg reflector(DBR) mirrors of VCSELs and the laser emission are perpendicular to the wafer epitaxial surface, they facilitate the realization of two-dimensional dense integration for high-power arrays. The 808 nm wavelength is crucial in high-power laser applications, serving as an optimal pump source for Nd∶YAG or Nd∶YVO4 crystals to generate 1064 nm wavelength lasers. Its suitability for medical aesthetics, owing to melanin absorption and deep skin penetration, extends its applicability to the military and industrial domains. Therefore, conducting reliability studies and analyses of high-power 808 nm VCSEL arrays is of significant practical importance. However, the operation of high-power VCSEL arrays results in substantial heat power density. The most direct approach to address the thermal management of 808 nm high-power VCSEL arrays is substrate transfer, which involves the migration of light-emitting units from a GaAs substrate to a high-thermal-conductivity substrate. Paradoxically, a reduction in the lifespan of substrate-transfer devices has been observed despite the concurrent enhancement in the optoelectronic conversion efficiency.Consequently, it is imperative to conduct reliability studies and analyses that specifically target substrate-transfer devices. This study addresses the challenges introduced during substrate-transfer packaging such as irregular surface protrusions, high solder void rates,and an increased number of failure-emitting points(dark spots under CCD microscopy). Through the implementation of detection methods, we selectively identify the devices exhibiting these issues, categorize them, and subject them to aging experiments. By comparing the power decay rates and analyzing the locations of the newly emerged failure-e

关 键 词：垂直腔面发射激光器 高功率 长脉冲 失效分析 早期筛选 

分 类 号：TN248.4[电子电信—物理电子学]